International Business Machines Corporation

Steven L Peterman

David Stanasolovich

Madan M Nanda

A process for defining vias through a polyimide and silicon nitride layer is disclosed. After the deposition of a first layer of silicon nitride and a second layer of polyimide, a layer of photoresist capable of producing negatively sloped walls is then lithographically defined with a pattern of vias. After the photoresist is developed, the polyimide layer is etched with a CF.sub.4 O.sub.2 gas mixture using the developed photoresist layer as etch mask. The silicon nitride layer is then etched with a CF.sub.4 /H.sub.2 gas mixture using the etched polyimide layer as an etch mask.

Process for defining vias through silicon nitride and polyamide

A process for making metal contacts and interconnection lines which are self-aligned to each other is disclosed. After semiconductor devices are formed and an insulating/planarizing layer is deposited, a layer of polyimide is deposited. A pattern of trenches into which the metal interconnection lines will be deposited is formed in the polyimide layer. Next, a pattern of contacts to the underlying semiconductor devices is formed in a photoresist layer. This pattern of contacts is subsequently etched into the insulating/planarizing layer. Since both the patterned photoresist layer and the patterned polyimide layer are used as etch masks, the contact windows through the insulating/planarizing layer and the trenches in the polyimide layer will be aligned with respect to each other. After metal deposition, the metal contacts and interconnection lines will be self-aligned.

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Manassas, VA, United States of America

Steven L Peterman