International Business Machines Corporation

Samsung Electronics Co., Ltd.

Applied Materials, Inc.

Chartered Semiconductor Manufacturing Ltd (corporation)

Steven E Molis

Jane M Shaw

Alfred Viehbeck

Jeffrey Curtis Hedrick

Elizabeth F Foster

Stephen L Tisdale

Ali Afzali-ardakani

Rodney T Hodgson

Shahrokh Daijavad

Ashit A Mehta

Bodil E Braren

James L Hedrick, Jr

Juan Ayala-Esquilin

Daniel C Edelstein

Marie Angelopoulos

Ravi F Saraf

Liam David Comerford

Niranjan Mohanlal Patel

Vincent Albert Bourgault

Michael Wayne Mirre

Peter Joseph Spellane

Chih-Chao Yang

Darryl D Restaino

Ali Afzali Ardakani

Ali Afzali-Ardakani

Alfred Grill

Timothy Harrison Daubenspeck

Wolfgang Sauter

Stephen McConnell Gates

Sanjay C Mehta

Edmund Juris Sprogis

Gareth Geoffrey Hougham

Hosadurga K Shobha

Griselda Bonilla

Alexandros T Demos

Shyng-Tsong Chen

Claudius Feger

Kang Sub Yim

William Edward Sablinski

Peter Slota, Jr

John J Ritsko

Charles L Reynolds

Anita Madan

Johnny Widodo

Jae-hak Kim

Ronald Dean Goldblatt

John E Heidenreich, Iii

Jiali Wu

Gordon C Osborne, Jr

Randy William Snyder

Walter P Pawlowski

John J Glenning

Vu Ngoc Tran Nguyen

Nancy R Klymko

Steven L Bard

Ned J Chou

Luis M Ferreiro, Deceased

Steven Reiter

A releasable buried layer for 3-D fabrication and methods of manufacturing is disclosed. The method includes forming an interposer structure which includes forming a carbon rich dielectric releasable layer over a wafer. The method further includes forming back end of the line (BEOL) layers over the carbon rich dielectric layer, including wiring layers and solder bumps. The method further includes bonding the solder bumps to a substrate using flip chip processes. The flip chip processes comprises reflowing the solder bumps and rapidly cooling down the solder bumps which releases the carbon rich dielectric releasable layer from the wafer.

Releasable buried layer for 3-D fabrication and methods of manufacturing

Alternative methods of fabricating an interconnect structure in which an enhanced diffusion barrier including an in-situ formed metal nitride liner formed between an interconnect dielectric material and an overlying metal diffusion barrier liner are provided. In one embodiment, at least one opening is formed into an interconnect dielectric material. A nitrogen enriched dielectric surface layer is formed within exposed surfaces of the interconnect dielectric material utilizing thermal nitridation. A metal diffusion barrier liner is the formed. During and/or after the formation of the metal diffusion barrier liner, a metal nitride liner forms in-situ in a lower region of the metal diffusion barrier liner. A conductive material is then formed on the metal diffusion barrier liner. The conductive material, the metal diffusion barrier liner and the metal nitride liner that are located outside of the at least one opening are removed to provide a planarized structure.

Enhanced diffusion barrier for interconnect structures

Alternative methods of fabricating an interconnect structure in which an enhanced diffusion barrier including an in-situ formed metal nitride liner formed between an interconnect dielectric material and an overlying metal diffusion barrier liner are provided. In one embodiment, the method includes forming at least one opening into an interconnect dielectric material. A nitrogen enriched dielectric surface layer is formed within exposed surfaces of the interconnect dielectric material utilizing thermal nitridation. A metal diffusion barrier liner is formed on the nitrogen enriched dielectric surface. During and/or after the formation of the metal diffusion barrier liner, a metal nitride liner forms in-situ in a lower region of the metal diffusion barrier liner. A conductive material is then formed on the metal diffusion barrier liner. The conductive material, the metal diffusion barrier liner and the metal nitride liner that are located outside of the at least one opening are removed to provide a planarized conductive material, a planarized metal diffusion barrier liner and a planarized metal nitride liner, each of which includes an upper surface that is co-planar with the nitrogen enriched dielectric surface layer of the interconnect dielectric material.

A method to reduce liquid polymer macromolecule mobility through forming a polymer blend system is provided. More particularly, a small amount of polymer crosslinker is added to a liquid polymer matrix to prevent intermolecular movement. The crosslinker functions as cages to block linear or branched linear macromolecules and prevent them from sliding into each other.

Method to improve wettability by reducing liquid polymer macromolecule mobility through forming polymer blend system

When an interconnect structure is built on porous ultra low k (ULK) material, the bottom and/or sidewall of the trench and/or via is usually damaged by a following metallization or cleaning process which may be suitable for dense higher dielectric materials. Embodiments of the present invention may provide a method of repairing process induced dielectric damage from forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes treating an exposed area of the ILD material to create a carbon-rich area, and metallizing the carbon-rich area. One embodiment includes providing treatment to an exposed sidewall area of the ILD material to create a carbon-rich area by irradiating the exposed area using a gas cluster ion beam (GCIB) generated through a gas including a straight chain or branched, aliphatic or aromatic hydrocarbon, and metallizing the carbon-rich area.

Method of repairing process induced dielectric damage by the use of GCIB surface treatment using gas clusters of organic molecular species

Methods of forming devices include forming a first electrically insulating layer having a metal interconnection therein, on a substrate and then forming a first electrically insulating barrier layer on an upper surface of the metal interconnection and on the first electrically insulating layer. The first electrically insulating barrier layer is exposed to a plasma that penetrates the first electrically insulating barrier and removes oxygen from an upper surface of the metal interconnection. The barrier layer may have a thickness in a range from about 5 &#x212b; to about 50 &#x212b; and the plasma may be a hydrogen-containing plasma that converts oxygen on the upper surface of the metal interconnection to water.

Methods of forming metal interconnect structures on semiconductor substrates using oxygen-removing plasmas and interconnect structures formed thereby

Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength

This invention is concerned with an electrically conductive polymer blend composition which is a liquid compatible blend, comprising a doped product formed form blending a first solution comprising a Lewis base electrically conductive polymer in undoped form in a first organic solvent with a second solution comprising a Lewis acid polymer dopant in a second organic solvent, wherein said Lewis acid polymer dopant dopes said Lewis base electrically conductive polymer in undoped form to obtain said electrically conductive polymer blend, the resulting doped conductive product being soluble in the combination of said first and said second organic solvents and mixable at the molecular level.

Electrically conductive polymeric materials and use thereof

The present invention relates to electrically conductive polymer blend compositions comprising a non-conducting polymeric component and an electrically conducting polymeric component and specific applications to which the blend compositions can be put.

A polymer blend composition, capable of being made electrically conductive by application of heat having an electrically conductive upon doping polymer in undoped form; the undoped polymer is selected from the group consisting of substituted and unsubstituted polyparaphenylenevinylenes, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polyselenophenes, polyacetylenes filtered from soluble precursors and combinations and blends thereof, compounded and blended at a molecular scale with a dielectric polymer; wherein the dielectric polymer is selected from the group consisting of interpolymers of acrylonitrile-butadiene-styrene, acetal acrylic liquid crystal polymers, polybutylene terephthalate, polycarbonate, polyester, polyetherimide, polyethersulfone, polyethylene, polyethylene terephthalate, polyphenylene oxide, polyphenylene sulfide, polypropylene, polystyrene, polyurethane, polyvinychloride, styrene-acrylonitrile copolymer, fluoropolymers, nylon polyesters, and thermoplastic elastomers, and a thermally deblockable dopant selected from the group consisting of triflates, tosylates and borates, the electrically conductive upon doping polymer having enhanced solubility in undoped form with said dielectric polymer to form a compatible molecularly mixed blend in solution; doping of the polymer occurs only after exposure to heat.

Disclosed are structures comprising a composite of fluorinated particulate carbon dispersed in a polymer, the fluorinated carbon being present in an amount sufficient to reduce the dielectric constant of the composition, the structure also including electrical conductor patterns. The composite can be made conductive by irradiating it with an UV excimer laser.

Fluorinated carbon polymer composites

Disclosed is a process of effecting a change in the dielectric constant and coefficient of thermal expansion of a polyimide material, by forming a composite based on a dispersion of 2-60 wt. % of fluorinated particulate carbon material and a polyimide or polyimide precursor, and heating the dispersion to about 400.degree. C. at 65.degree.-200.degree. C./second.

Method for water vapor plasma treating the surface of a polymer body to enhance the adhesion of a first and second polymer surface. The method is particularly useful for polyimide surfaces.

Method for enhancing the adhesion of polymer surfaces by water vapor

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Patterson, NY, United States of America

Steven E Molis