Mattson Technology, Inc

Genus, Inc.

Steven C Selbrede

Stephen E Savas

Brad S Mattson

Martin L Hammond

Norman L Turner

Frank Otto Uher

Neil Mackie

Martin L Zucker

Sien G Kang

Raymond L Chow

Johannes J Schmitz

Frederick J Scholz

A remote plasma cleaning system includes a high conductance delivery line that delivers activated species from a remote plasma generator to a processing chamber. The delivery line preferably has a conductance of greater than 40 liters per second, enabling the power levels of the remote plasma generator to be maintained at less than about 3 kW. In one embodiment, activated species may be introduced into the processing chamber via one or more inlet ports disposed in a side portion of the processing chamber. In another embodiment, a coaxial inject/exhaust assembly enables activated species to be introduced into the processing chamber via an inner tube and gases to be exhausted from the processing chamber via an outer tube. Other embodiments incorporate an compound valve in the delivery system for selectively isolating the RPC chamber from the processing chamber and an optical baffle for protecting sensitive components of the isolation valve from exposure to ion bombardment and plasma radiation. The processing chamber may also include flow channels that enable activated species to clean cavities and components located underneath the susceptor, such as lift pin assemblies. Endpoint detection of the remote plasma clean may be performed by igniting a second low-power plasma in the processing chamber from activated species generated by the remote plasma generator, and monitoring emission lines (or ratios thereof) from the second plasma using an optical detector.

Systems and methods for remote plasma clean

A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the reactor chamber causing a plasma to form. A split Faraday shield is interposed between the induction coil and the reactor chamber to substantially block the capacitive coupling of energy into the reactor chamber which may modulate the plasma potential. The configuration of the split Faraday shield may be selected to control the level of modulation of the plasma potential. For etch processes, a separate powered electrode may be used to accelerate ions toward a wafer surface. For isotropic etching processes, charged particles may be filtered from the gas flow, while a neutral activated species passes unimpeded to a wafer surface.

Inductive plasma reactor

Apparatus including a support and purge gas supply prevents edge and backside coating on a wafer in manufacture of integrated circuits. Various enclosure elements and methods are disclosed for containing and directing purge gas, and a CVD system is provided incorporating the elements of the invention.

Purge gas in wafer coating area selection

An apparatus for preventing edge and backside coating during CVD processing supports a wafer on flexible supports within a purge cavity in a pedestal such that a movable clamp ring deforms the supports, forms a slot with the frontside of the wafer around the periphery of the wafer and by contacting the pedestal isolates the purge cavity from the coating chamber except for the slot. The wafer is heated by a pyrolytic carbon heater in the cavity and purge gas is fed to the purge cavity to flow through the slot and purge coating gas from diffusing into the purge cavity to coat the heater or the edge or backside of the wafer. In an alternative embodiment plural pedestals allow processing of plural wafers in a single cycle, and a vacuum lock and automatic handling devices are provided.

Differential pressure CVD chuck

An apparatus for preventing edge and backside coating during CVD processing supports a wafer on flexible supports within a purge cavity in a pedestal such that a movable clamp ring deforms the supports, forms a slot with the frontside of the wafer around the periphery of the wafer and by contacting the pedestal isolates the purge cavity from the coating chamber except for a the slot. The wafer is heated by a pyrolytic carbon heater in the cavity and purge gas is fed to the purge cavity to flow through the slot and purge coating gas from diffusing into the purge cavity to coat the heater or the edge or backside of the wafer. In an alternative embodiment plural pedestals allow processing of plural wafers in a single cycle, and a vacuum lock and automatic handling devices are provided.

Growing community of inventors

San Jose, CA, United States of America

Steven C Selbrede