Tokyo Electron Limited

Tel Nexx, Inc.

Tokyo Electron Limi Ted

Tel Epion Corporation

Stephen N Golovato

Arthur Keigler

Jay R Wallace

Daniel Goodman

Robert W Milgate, Iii

Arthur H Laflamme, Jr

David Felsenthal

Martin Kent

Abron S Toure

Thomas G Tetreault

Ramya Chandrasekaran

Georgiy Seryogin

Paul Louis Consoli

Johannes Westendorp

Techniques disclosed herein a method and system for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Method for increasing adhesion of copper to polymeric surfaces

A substrate processing pallet can cool a substrate. A substrate processing pallet can include a base member; an interface pad attachable to the base member, the interface pad having substantially the same coefficient of thermal expansion as the base member and adapted to facilitate cooling of the substrate; and a surface of the base member having features for aligning a substrate on the interface pad. A substrate processing pallet can also include a base member; an interface pad attachable to the base member; an electrostatic chuck for gripping the substrate during processing; an energy storage system for storing energy to sustain the electrostatic chuck at sufficient charge to sustain grip the substrate during processing; and a conduit for transporting gas to a backside of the substrate to facilitate cooling of the substrate.

Substrate processing pallet with cooling

An electrical coupling is provided between chamber parts of electronic device processing equipment (e.g., equipment used for processing semiconductor wafers) to reduce differences in the electrical potential between such parts. The coupling prevents or at least reduces the presence of plasma or excited gases in undesired regions of the process chamber. In illustrated embodiments, the coupling extends from a cover of a vertically movable electrode assembly to the liner of the chamber wall. Although these parts are each respectively coupled to ground, it is believed that differences in the ground path impedances result in these parts having different electrical potentials, and the potential differences can cause plasma or excited gases to be present in undesirable regions of the chamber. These electrical potential differences are suppressed by electrically coupling the parts to thereby prevent or reduce the presence of plasma or excited gases in undesired regions of the chamber. Although in the illustrated embodiments the cover of the electrode assembly is coupled to the chamber liner, the coupling could be utilized to suppress potential differences between other chamber parts.

Electrical coupling between chamber parts in electronic device processing equipment

An arrangement for improved thermal and/or electrical coupling between parts disposed in electronic device processing equipment is provided. In an illustrated embodiment, an improved coupling between a chamber liner and a chamber wall is provided which can be utilized in semiconductor processing equipment. The arrangement includes a compressible coupling or gasket which is compressed between a wedge ring and the chamber wall. The chamber liner is coupled to the wedge ring, so that the chamber liner is coupled to the chamber wall by way of the wedge ring and compressible coupling.

Electronic device processing equipment having contact gasket between chamber parts

A processing system for processing a substrate with a plasma comprises a processing chamber defining a process space including a support structure for supporting a substrate within the process space. A gas inlet in the chamber introduces a process gas into the chamber and a showerhead positioned within the chamber disperses process gas from the inlet. A supply of electrical energy biases the showerhead to form a plasma with process gas dispersed by the showerhead. First and second electrical insulator elements are positioned between the showerhead and the processing chamber, and are operable to electrically insulate the showerhead from the processing chamber. The first and second electrical insulator elements each have a passage therethrough for passing a process gas from the gas inlet through the insulator element and the respective passages of the insulator elements are laterally spaced from each other. A channel is formed in one of the elements and extends between the spaced passages to couple the passages together and form a complete passage through the first and second insulator elements for passing a process gas to the showerhead.

Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber

The invention for etching a substrate containing an oxide layer reduces activated oxygen within the plasma and maintains a high soft etch rate in a series of subsequent etches. In one aspect of the invention, a second substrate, in the form of a substrate ring, is utilized in the processing chamber and is etched in conjunction with a first substrate being processed. This substrate ring is formed of a material which, when etched, reacts with activated oxygen to form a stable oxygen-containing compound which may be evacuated from the system. In another aspect of the invention, a first power level for inductively coupling energy to the plasma is determined to establish a bias voltage level at the substrate of approximately 100 Volts. A second, lower power level is then determined for producing a bias voltage level at the substrate not significantly higher than 300 Volts. With the range provided by the determined first and second power levels, an etching power level is selected for inductively coupling energy to the plasma in the range of the first and second power levels but closer to the second power level than the first power level to reduce oxygen activated in the plasma. The etching power level is also selected to establish an etch rate of the substrate in the range of approximately 300-500 .ANG./min. for a semiconductor oxide such as silicon dioxide, and 75-125 .ANG./min. for a metal oxide, which would be considered a soft etch.

Method for etch rate enhancement by background oxygen control in a soft

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Lexington, MA, United States of America

Stephen N Golovato