Pdf Solutions, Incorporated

Stephen Lam

Indranil De

Jeremy Cheng

Christopher Hess

Dennis Ciplickas

Larg H Weiland

Jonathan Haigh

Sherry F Lee

Kimon Michaels

John Kibarian

Tomasz Brozek

Hans Eisenmann

Sheng-Che Lin

Rakesh Vallishayee

Vyacheslav Rovner

Andrzej Strojwas

Markus Rauscher

Carl Taylor

Simone Comensoli

Hideki Matsuhashi

Conor O'Sullivan

Kelvin Doong

Marcin Strojwas

Timothy Fiscus

Nobuharu Yokoyama

Marci Liao

Matthew Moe

Yoram Schwarz

Thomas Sokollik

Xumin Shen

Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell

Methods for aligning a particle beam and performing a non-contact electrical measurement on a cell using a registration cell

An IC that includes a contiguous standard cell area with a 4x3 e-beam pad that is compatible with advanced manufacturing processes and an associated e-beam testable structure.

IC with test structures and e-beam pads embedded within a contiguous standard cell area

An IC that includes a contiguous standard cell area with a 4&#xd7;3 e-beam pad that is compatible with advanced manufacturing processes and an associated e-beam testable structure.

IC with test structures and E-beam pads embedded within a contiguous standard cell area

A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas.

Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas

An IC includes a contiguous standard cell area with first, second, and third TS-GATE-short-configured test area geometries disposed therein. In some embodiments, the contiguous standard cell area may further include: fourth and fifth TS-GATE-short-configured test area geometries, and/or other test area geometries, such as tip-to-tip-short, tip-to-side-short, diagonal-short, corner-short, interlayer-overlap-short, via-chamfer-short, merged-via-short, snake-open, stitch-open, via-open, or metal-island-open.

IC with test structures embedded within a contiguous standard cell area

Improved processes for manufacturing wafers, chips, or dies utilize in-line data obtained from non-contact electrical measurements ('NCEM') of fill cells that contain structures configured target/expose a variety of open-circuit, short-circuit, leakage, or excessive resistance failure modes. Such processes may involve evaluating Designs of Experiments ('DOEs'), comprised of multiple NCEM-enabled fill cells, in at least two variants, all targeted to the same failure mode(s).

Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells

A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with a moving stage and beam deflection to account for motion of the stage.

Methods for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage

An IC includes first and second designs of experiments (DOES), each comprised of at least two fill cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements ('NCEM'). The first DOE contains fill cells configured to enable non-contact (NC) detection of tip-to-side shorts, and the second DOE contains fill cells configured to enable NC detection of corner shorts.

Integrated circuit containing first and second DOEs of standard Cell Compatible, NCEM-enabled Fill Cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including corner short configured fill cells

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Freemont, CA, United States of America

Stephen Lam