The State University of New York

Stephen G Bennett

Douglas Duane Coolbaugh

Daniel Pascual

Jeremiah Hebding

Megha Rao

Joseph Piccirillo, Jr

Colin McDonough

Michael Liehr

Matthew Smalley

An apparatus and method are provided for integrating TSVs into devices prior to device contacts processing. The apparatus includes a semiconducting layer; one or more CMOS devices mounted on a top surface of the semiconducting layer; one or more TSVs integrated into the semiconducting layer of the device wafer; at least one metal layer applied over the TSVs; and one or more bond pads mounted onto a top layer of the at least one metal layer, wherein the at least one metal layer is arranged to enable placement of the one or more bond pads at a specified location for bonding to a second device wafer. The method includes obtaining a wafer of semiconducting material, performing front end of line processing on the wafer; providing one or more TSVs in the wafer; performing middle of line processing on the wafer; and performing back end of line processing on the wafer.

Apparatus and method for integration of through substrate vias

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Niskayuna, NY, United States of America

Stephen G Bennett