Infineon Technologies Ag

Steffen Jordan

Edmund Riedl

Thorsten Scharf

Stefan Miethaner

Joachim Mahler

Alexander Heinrich

Martin Gruber

Wolfgang Schober

Mathias Vaupel

Johannes Lodermeyer

Stefan Schwab

Christof Matthias Schilz

Thomas Ziegler

Fee Hoon Wong

A method of manufacturing a package includes forming an adhesion promoter on at least part of an electronic component. The adhesion promoter is a morphological adhesion promoter including a morphological structure having a plurality of openings. The method further includes at least partially encapsulating the electronic component with an inorganic encapsulant with the adhesion promoter in between. The adhesion promoter enhances adhesion between at least part of the electronic component and the encapsulant.

Method of manufacturing a package having an adhesion promoter

A method of forming a chip package is provided. The method includes providing a malleable carrier with a layer of an electrically conductive material formed thereon, and positive fitting the malleable carrier to a chip to at least partially enclose the chip with the malleable carrier. The layer at least partially physically contacts the chip, such that the layer electrically contacts a chip contact of the chip. The layer forms a redistribution layer.

Method of forming a chip package and chip package

A package includes an electronic component, an inorganic encapsulant encapsulating at least part of the electronic component, and an adhesion promoter between at least part of the electronic component and the encapsulant.

Inorganic encapsulant for electronic component with adhesion promoter

A chip carrier includes a redistribution structure, wherein the redistribution structure includes: a dielectric layer extending in a horizontal direction; a first electrically conductive layer arranged over the dielectric layer and extending in the horizontal direction; a trench arranged in the dielectric layer and extending in the horizontal direction; and a filling material filling the trench, wherein the filling material is different from the material of the dielectric layer.

Chip carriers and semiconductor devices including redistribution structures with improved thermal and electrical performance

A package comprising an electronic chip, a laminate-type encapsulant at least partially encapsulating the electronic chip, a wiring structure extending from the electronic chip up to a contact pad, and a completely galvanically formed solderable exterior electric contact electrically coupled with the electronic chip by being arranged on the contact pad.

Chip embedding package with solderable electric contact

The method comprises providing a plurality of electronic devices, embedding the electronic devices in an encapsulation layer, forming vias into the encapsulation layer, the vias extending from a main face of the encapsulation layer to the electronic devices, and depositing a metallic layer onto the encapsulation layer including the vias by galvanic plating, the method further comprising providing a current distribution layer for effecting a distributed growth of the metallic material during the galvanic plating.

Method of galvanic plating assisted by a current distribution layer

A semiconductor package includes a semiconductor component including a circuit carrier with a plurality of inner contact pads, a semiconductor chip, and a plurality of electrical connections. An adhesion promotion layer is disposed on at least areas of the semiconductor component and a plastic encapsulation material encapsulates at least the semiconductor chip, the plurality of electrical connections and the plurality of the inner contact pads. Surface regions of the semiconductor component are selectively activated.

Semiconductor package and method of assembling a semiconductor package

A semiconductor package includes a leadframe defining a die pad, a chip electrically coupled to the die pad, encapsulation material covering the chip and the die pad, and a plurality of lead ends exposed relative to the encapsulation material and configured for electrical communication with the chip, and a nitrogen-containing hydrocarbon coating disposed over at least the lead ends of the leadframe, where the hydrocarbon coating is free of metal particles.

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Viehhausen, Germany

Steffen Jordan