Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Albert-Ludwigs-Universitat Freiburg

Stefan Glunz

Ralf Preu

Daniel Kray

Andreas Grohe

Ansgar Mette

Kuno Mayer

Monica Aleman

Eric Schneiderlöchner

Ralf Lüdeman

Wolfram Wettling

Damian Pysch

The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.

Method for the precision processing of substrates

A method of electrically contacting a semiconductor layer () coated with at least one dielectic layer () which is coated with a metal layer the metal layer () is applied on the dielectric layer () and the metal layer () is temporarily locally heated in a line, linear or dotted pattern by means of a source of radiation () in a controlled manner in such a way that a local molten mixture, is formed consisting exclusively of the metal layer (), the dielectric layer () and the semiconductor layer () are located directly underneath the metal layer () and upon solidification, leads to an electrical contact between the semiconductor layer () and the metal layer ().

Method of producing a semiconductor-metal contact through a dielectric layer

Solar cell having an emitter provided with a surface texture and a

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Freiburg, Germany

Stefan Glunz