Infineon Technologies Ag

Stefan Brandl

Yayi Wei

Francis Goodwin

Brian Martinick

Embodiments of the invention provide a method for spin coating a film onto a substrate. Preferred embodiments deposit a film, such as a resist, having a thickness gradient from the substrate's centrifugal center to its edge. The gradient may be linear or stepwise continuous, for example. Other embodiments of the invention provide a semiconductor fabrication method. The method comprises forming a resist layer having a predetermined thickness on a substrate. Preferably, the predetermining includes making swing curve measurements on a single test wafer that is coated according to embodiments of the invention.

Method of spin coating a film of non-uniform thickness

A preferred embodiment of the invention provides a semiconductor fabrication process. Embodiments include a method for removing contaminating particles from the surface of the wafer, such as in lithography. Embodiments also provide methods for repairing patterning defects caused by particles. The method comprises forming a resist layer over a substrate and a topcoat layer over the resist layer. The method further includes exposing the resist layer, and developing the resist layer a first time. Preferably, developing the resist layer the first time comprises dissolving a first portion of the topcoat layer in the developing solution. Embodiments further include spinning the substrate, developing the resist layer a second time after spinning the substrate. Preferably, developing the resist layer the second time comprises dissolving a second portion of the topcoat layer. Other embodiments provided include a topcoat layer that is insoluble in a developer solution, thereby requiring using a topcoat removal solution.

Method for reducing lithography pattern defects

A preferred embodiment of the invention provides a method for forming an integrated circuit. The method comprises forming a resist layer on a substrate. Preferably, the photoresist layer comprises a photo acid generator (PAG). Embodiments include irradiating the resist through a mask to generate a photoacid in the resist, heating the resist at a first temperature, and then heating the resist at a second temperature. Heating at the first temperature evaporates water from the resist. Heating at the second temperature deprotects the resist.

Post exposure resist bake

Fluids for use in immersion lithography systems are disclosed. A resistivity-altering substance is introduced into a fluid, making it more conductive. The fluid is then disposed between an immersion head of a projection lens system and a semiconductor wafer during an exposure process. Because the fluid is conductive, electrostatic energy that may develop during the movement of the semiconductor wafer with respect to the projection lens system during the exposure process is discharged through the conductive fluid, preventing damage to an immersion head of the projection lens system, the semiconductor wafer, and sensors of a stage that supports the semiconductor wafer.

Growing community of inventors

Albany, NY, United States of America

Stefan Brandl