Taiwan Semiconductor Manufacturing Comp. Ltd.

Ssu-Yu Li

Chii-Horng Li

Chien-Hao Chen

Harry Chuang

Kuo-Tai Huang

Jin-Aun Ng

Chien-Liang Chen

Hao-Ming Lien

Jun-Lin Yeh

Kang-Cheng Lin

Wen-Chih Yang

Chung-Hau Fei

Chi Hsin Chang

Chun Ming Lin

The present disclosure provides a semiconductor device that includes a semiconductor substrate and a transistor formed in the substrate. The transistor includes a gate stack having a high-k dielectric and metal gate, a sealing layer formed on sidewalls of the gate stack, the sealing layer having an inner edge and an outer edge, the inner edge interfacing with the sidewall of the gate stack, a spacer formed on the outer edge of the sealing layer, and a source/drain region formed on each side of the gate stack, the source/drain region including a lightly doped source/drain (LDD) region that is aligned with the outer edge of the sealing layer.

Method of fabricating a sealing structure for high-k metal gate

Growing community of inventors

Hsinchu, Taiwan

Ssu-Yu Li