Micron Technology Incorporated

Srividya Krishnamurthy

Durai Vishak Nirmal Ramaswamy

Dale Collins

Swapnil Lengade

Noel Rocklein

Mark S Korber

Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material.

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Boise, ID, United States of America

Srividya Krishnamurthy