Applied Materials, Inc.

Soovo Sen

Inna Shmurun

Ellie Y Yieh

Juan Carlos Rocha-Alvarez

Shankar Venkataraman

Visweswaren Sivaramakrishnan

Thomas E Nowak

Peter K Lee

Kang Sub Yim

Mark A Fodor

Dian Sugiarto

Nancy Fung

Peter Wai-Man Lee

Eller Y Juco

Andrzej Kaszuba

Ju-Hyung Lee

Mario David Silvetti

Maosheng Zhao

Lun Tsuei

Sophia M Velastegui

Troy Kim

Brian Hopper

A method and apparatus for a chamber for chemical vapor deposition on a substrate in a processing region comprising a gas box having a heated lid comprising a gas inlet passage, and a face plate connected to the heated lid positioned to conduct gas from the heated gas box to a substrate processing region. Also, a method for providing heat to a chemical vapor deposition chamber comprising supplying heat to a lid of a gas box, and heating a face plate connected to the gas box by heat transfer from the lid.

Heated gas box for PECVD applications

A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

Substrate heater assembly

A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has a plurality of holes formed therethrough. A lip extends from a side of the disk opposite the annular body and away from the mounting flange. The showerhead may be used for the deposition of dielectric materials on a substrate. In one embodiment, silicon nitride and silicon oxide layers are formed on the substrate without removing the substrate from a processing chamber utilizing the showerhead of the present invention.

Method and apparatus for deposition of low dielectric constant materials

An apparatus for distributing gas in a processing system. In one embodiment, the system includes a gas distribution assembly having a gas distribution plate. The gas distribution plate defines a plurality of holes through which gases are transmitted. The assembly further includes a gas box coupled to the gas distribution plate, in which the gas box is configured to supply the gases into the plurality of holes. The assembly further includes a means for reducing heat transfer from the gas box to the gas distribution plate.

Heated gas distribution plate for a processing chamber

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Sunnyvale, CA, United States of America

Soovo Sen