Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Soon Taik Hwang

Young Hun Byun

Euk Che Hwang

Seok Mo Chang

Sang Yoon Lee

Jin Sung Kim

Hae Jung Son

Byong Ki Yun

Won Cheol Jung

Jong Il Park

Jin Woo Cheon

Kyung Bok Lee

Min Chul Chung

Sung Nam Cho

An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01&#x2dc;10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness, and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

Organometallic composition for forming a metal alloy pattern and a method of forming such a pattern using the composition

An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01&#x2dc;10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

The object of this invention is to provide an organometallic precursor for forming a metal film or pattern and a method of forming the metal film or pattern using the same. More particularly, the present invention provides an organometallic precursor containing a hydrazine-based compound coordinated with a central metal thereof, and a method of forming a metal film or pattern using the same. Further, the present invention provides a composition containing an organometallic compound and a hydrazine-based compound, and a method of forming a metal film or pattern using the same. Additionally, the present invention is advantageous in that a pure metal film or pattern is formed using the organometallic precursor or composition through a simple procedure without limiting atmospheric conditions at a low temperature, and the film or pattern thus formed has excellent conductivity and morphology. Therefore, the film is useful in an electronic device field including flexible displays and large-sized TFT-LCD.

Organometallic precursor for forming metal film or pattern and method of forming metal film or pattern using the same

A rapid and efficient process of forming a metal-containing pattern by producing, through photoreaction, a difference in solubility between exposed and unexposed areas of a thing film, and developing the film to produce a patterned film, followed by oxidation or reduction to provide a pure metal or metal oxide pattern.

Process of forming a micro-pattern of a metal or a metal oxide

An organometallic precursor mixture for forming a metal alloy pattern and a method of forming the metal alloy pattern using the same, wherein the metal alloy pattern having improved adhesive force to a substrate, heat resistance, and resistance to atmospheric corrosion can be readily formed using the organometallic precursor mixture by and exposing step without using a separate photosensitive resin.

Organometallic precursor mixture for forming metal alloy pattern and method of forming metal alloy pattern using the same

An organic metal precursors containing one or more organic ligands bonded to one or more metal atoms, wherein the organic ligand is rapidly dissociated from the metal atom upon exposure to light and degraded leaving a metal or a metal oxide. By using the organic metal precursors, an electroconductive, metal-containing patterned film can be easily deposited on a substrate at room temperature under atmospheric pressure without using photosensitive resins.

Organic metal precursor for use in forming metal containing patterned films

Disclosed are a metallic nanoparticle cluster ink and a method for forming a conductive metal pattern using the cluster ink. The metallic nanoparticle cluster ink comprises colloidal metallic nanoparticles and a bifunctional compound. The conductive metal pattern is formed by forming a metallic nanoparticle pattern on a substrate using a mold made from PDMS (poly(dimethylsiloxane) polymer as a stamp, and heat-treating the substrate. Micrometer-sized conductive metal patterns can be easily formed on various substrates in a simple and inexpensive manner without the use of costly systems, thereby being very useful in various industrial fields.

Metallic nanoparticle cluster ink and method for forming metal pattern using the same

An organometallic precursor for forming a metal pattern and a method of forming the metal pattern using the same, in which an electrically conductive metal pattern is formed using an organometallic precursor, through an exposing step without using a separate photosensitive resin. The exposure time required to dissociate the organic ligands from the metals of the organometallic precursor is very short making the overall patterning process very efficient.

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Kyungki-do, South Korea

Soon Taik Hwang