Fujimi Incorporated

Sonosuke Ishiguro

Shogo Onishi

Tsutomu Yoshino

The polishing composition according to the present invention is a polishing composition which contains abrasive grains, an additive, a pH adjusting agent, and a dispersing medium and in which a zeta potential of the abrasive grains is negative, the additive is a crosslinked bicyclic compound having a tertiary nitrogen atom, a content of the additive is more than 0% by mass and less than 0.5% by mass with respect to the entire polishing composition mass, and a pH of the polishing composition is less than 5.

Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate

Provided is a means capable of sufficiently removing organic residues on the surface of an object to be polished after polishing. A surface treatment composition includes a polymer having a building block represented by Formula (1) in [Chemical Formula 1], a chelating agent, and water and is used to treat the surface of an object to be polished after polishing, and the chelating agent has at least one of a phosphonic acid group and a carboxylic acid group. In Formula (1), Ris a hydrocarbon group having 1 to 5 carbon atoms; and Ris a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

Surface treatment composition, method for producing surface treatment composition, surface treatment method, and method for producing semiconductor substrate

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Kiyosu, Japan

Sonosuke Ishiguro