Renesas Technology Corp.

Sonoko Migitaka

Tadashi Arai

Takashi Hattori

Hiroshi Shiraishi

Toshio Sakamizu

Satoshi Momose

Osamu Yamaguchi

Tsutomu Araki

Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist patternefficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate. The resist patterncomprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.

Photo mask

In the step of manufacturing a photomask, an opaque pattern is formed by using a photosensitive resin composition containing a specified light absorbent, which then used to manufacture a photomask for KrF excimer laser lithography in a short manufacturing time and at a reduced cost. Accordingly, the manufacturing time and the cost for semiconductor integrated circuit devices is reduced.

Photomask and manufacturing method of an electronic device therewith

Growing community of inventors

Kodaira, Japan

Sonoko Migitaka