United Microelectronics Corp.

Song-Yi Lin

En-Chiuan Liou

Chia-Chen Sun

Chih-Wei Hsu

Ming-Hsien Kuo

A photomask structure having a first region and a second region is provided. The layout pattern density of the first region is smaller than the layout pattern density of the second region. The photomask structure includes a first layout pattern, a second layout pattern, and first assist patterns. The first layout pattern is located in the first region and the second region. The second layout pattern is located in the second region. The second layout pattern is located on one side of the first layout pattern. The first assist patterns are located on the first sidewall of the first layout pattern and separated from each other. The first sidewall is adjacent to the second layout pattern. The first assist patterns are adjacent to a boundary between the first region and the second region. The lengths of two adjacent first assist patterns decrease in the direction away from the boundary.

Photomask structure

A method includes providing a layout pattern to a computer system. The layout pattern includes a first pattern, a second pattern, and a third pattern. A central line defined by connecting a line end of the second pattern and a line end of the third pattern overlaps with a middle portion of the first pattern. An optical proximity correction (OPC) is performed on the layout pattern to form a first auxiliary pattern. The first auxiliary pattern includes a first stripe pattern and a second stripe pattern both extending from the line end of the second pattern. The second stripe pattern is closer to the first pattern than the first stripe pattern, and an extending length of the second stripe pattern is less than an extending length of the first stripe pattern. The layout pattern and the first auxiliary pattern are outputted through the computer system onto a photomask.

Method of forming a layout pattern and photomask

A photomask structure including a layout pattern and at least one assist pattern is provided. The layout pattern includes corners. The assist pattern wraps at least one of the corners. There is a gap between the edge of the layout pattern and the assist pattern.

A method of designing a semiconductor device includes creating a library for test patterns on a frame and an on purpose violation layout on a main chip of a layout, and then creating filter marks according to the library. An OPC (optical proximity correction) is run using the layout, and an OPC verifying is performed for obtaining a pattern with hot spots to determine whether the hot spots are within the frame and the filter marks. When the hot spots are within the frame and the filter marks, a mask can be made. When the hot spots are outside the frame and the filter marks, it is necessary to check whether the hot spots need to be repaired. When the hot spots are within the frame and outside the filter marks, the hot spots are added into the library as data of the on purpose violation layout.

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Tainan, Taiwan

Song-Yi Lin