Applied Materials, Inc.

Son Trinh

Chien-Teh Kao

Xiaoxiong (John) Yuan

Mei Yin Chang

Wei W Wang

Xinliang Lu

Yu Wen Chang

Joel M Huston

See-Eng Phan

Sal Umotoy

Chiukin (Steven) Lai

Jing-Pei (Connie) Chou

Lawrence C Lei

Salvador P Umotoy

Harald Herchen

Lawrence Chung-Lai Lei

Mark S Johnson

Joseph Yudovsky

Avi Tepman

Karl Anthony Littau

Bo Zheng

Arthur Keigler

Anzhong Chang

Vincent E Burkhart

Ken Kaung Lai

Gwo-Chuan Tzu

Siqing Lu

Sergio Edelstein

Kenneth Tsai

Ping Jian

Timothy R Webb

Tom Madar

Bevan Vo

Anzhong (Andrew) Chang

Henan Hao

Jing-Pei Chou

Be Van Vo

Celina M Esteban

Wie W Wang

A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65&#xb0; C., heating the substrate to a temperature of at least about 75&#xb0; C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

Method for removing oxides

In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65&#xb0; C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100&#xb0; C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.

Method for front end of line fabrication

A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.

Lid assembly for front end of line fabrication

A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.

An apparatus for securing a substrate in an electrochemical deposition system is provided. The apparatus generally includes a substrate support member adapted to receive the substrate and a thrust plate assembly adapted to exert a downward force on the substrate. For some embodiments, a first sealing member adapted to engage a plating surface of the substrate may be attached to the substrate support member. The apparatus may also include a second sealing member adapted to engage a non-plating surface of the substrate or a surface of the substrate support member to prevent the flow of plating fluid to a non-plating surface of the substrate. The apparatus may also include electrical contacts to electrically contact the plating or non-plating surface of the substrate.

Method and apparatus for sealing electrical contacts during an electrochemical deposition process

An apparatus for providing an electrical bias to a substrate in a processing system is described. The apparatus generally includes a conductive annular body defining a central opening. The conductive annular body may have a substrate seating surface adapted to receive the substrate and a plurality of scallops formed on a surface opposing the substrate seating surface. A plurality of electrical contacts may be formed on the substrate seating surface opposite the plurality of scallops. The electrical contacts may be adapted to engage a plating surface of the substrate.

Plating uniformity control by contact ring shaping

An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.

Resonant chamber applicator for remote plasma source

A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.

Showerhead with reduced contact area

A substrate support having a removable edge ring, which is made of a material having a lower coefficient of thermal expansion (CTE), than that of the substrate support is provided. The edge ring and the substrate support are configured for pin and slot coupling. Specifically, either the edge ring, or the substrate support comprises a plurality of pins, and the other of the edge ring or the substrate support comprises a plurality of hollow regions or slots in which the pins may be inserted. The slots are at least as wide as a corresponding one of the plurality of pins and extend in the direction in which the substrate support expands and contracts during thermal cycling. Each of the slots extends a length which is sufficient to compensate for the difference between the CTE of the substrate support and the CTE of the edge ring, over the range of process temperatures to which the apparatus is exposed. Preferably the susceptor is made of aluminum, and the edge ring is made of ceramic. A restrictor gap may be defined between a surface of the substrate support and a surface of the purge ring so as to restrict a volume of purge gas flowing to an edge of a substrate positioned on the substrate support. The purge gas delivery channel may have an exposed outlet and may be upwardly angled to facilitate cleaning.

Method and apparatus for preventing edge deposition

The present invention provides a semiconductor fabrication process and cluster tool utilizing individual gas boxes for each of the processing chambers. These individual gas boxes provide an enclosure where groupings of related gas components may be positioned above and/or adjacent to the semiconductor processing chamber requiring those objects or components. The proximity of the individual gas boxes to the respective processing chambers facilitates the delivery of gases to the chamber as needed. Furthermore, the individual gas panels enable a modular design comprising a processing chamber and gas panel combination. This modular design allows individual chambers and their respective gas panels to be run through various pre-installation tests.

Chamber design for modular manufacturing and flexible onsite servicing

A lid assembly for a process chamber. The lid assembly includes a hinge having a hinge mount affixed to the chamber and a hinge arm. A pin extends from the hinge mount through an elongated slot in the hinge arm allowing both rotational and longitudinal motion of the hinge arm relative to the hinge mount. A support frame attached to the hinge arm has two side arms that extend perpendicularly from the hinge arms toward the front of the chamber. The lid is pivotally connected to the side arms by a pivot connection aligned with the center of mass of the lid. A detent extends from the lid through a slot in the side arm at a position offset from the pivot connection. The detent and slot serve to limit the allowable rotation of the lid relative to the lid support frame. Thus, the lid is allowed to float over the opening of the chamber as the lid is closed so that the lid may be positioned in parallel alignment relative to the opening of the chamber before being secured to the chamber.

Pivoting lid assembly for a chamber

The present invention provides a method and apparatus for improving thermal management of gas being delivered to a chemical vapor deposition chamber. Thermal management is accomplished using a heat transfer fluid in thermal communication with the deposition gas passageways delivering the gases to the chamber for deposition. The gas injection manifold includes gas passageways and coolant liquid passageways, wherein the gas passageways extend through a constant voltage gradient gas feedthrough and the coolant liquid passageways extend through a gas input manifold coupled to the inlet end of the constant voltage gradient gas feedthrough. This arrangement provides for increase coolant liquid flow and allows maintenance or disassembly of the constant voltage gradient gas feedthrough without breaking the seal on the coolant liquid system.

Heat exchange passage connection

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Cupertino, CA, United States of America

Son Trinh