Exogenesis Corporation

Son T Chau

Sean R Kirkpatrick

Kiet A Chau

A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

Enhanced high aspect ratio etch performance using accelerated neutral beams derived from gas-cluster ion beams

A film and method of forming a film provides an unmodified starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T, and a modified surface layer of thickness Twhich is less than T, formed in at least a portion of the second surface, wherein a portion of the modified surface layer is not supported by unmodified starting material removed from the first surface opposite the modified surface layer.

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Lynn, MA, United States of America

Son T Chau