Micron Technology Incorporated

Somik Mukherjee

Anish A Khandekar

Silvia Borsari

Vinay Nair

Russell A Benson

Zhiqiang Xie

Shen Hu

Sau Ha Cheung

Ying Rui

Methods, apparatuses, and systems related to forming a semiconductor using hybrid oxidation are described. An example method includes forming an opening to create an isolation region in a semiconductor substrate. The example method further includes depositing a first dielectric into the isolation region at a first oxidation rate. The example method further includes depositing a second dielectric into the isolation region at a second oxidation rate.

Semiconductor formation using hybrid oxidation

Methods, apparatuses, and systems related to a semiconductor nitridation passivation are described. An example method includes performing a dry etch process on a semiconductor structure on a wafer in a semiconductor fabrication process. The method further includes performing a dry strip process on the semiconductor structure. The method further includes performing a first wet strip clean process on the semiconductor. The method further includes performing a second wet strip clean process on the semiconductor. The method further includes performing a nitridation passivation on the semiconductor structure to avoid oxidization of the semiconductor structure. The method further performing a spacer material deposition on the semiconductor structure.

Semiconductor nitridation passivation

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Boise, ID, United States of America

Somik Mukherjee