Tokyo Electron Limited

Soichiro Okada

Hidetami Yaegashi

Kousuke Yoshihara

Takahiro Kitano

Masashi Enomoto

Yuichi Yoshida

Makoto Muramatsu

Satoru Shimura

Gen You

Keiji Tanouchi

Tadatoshi Tomita

Toshikatsu Tobana

A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, making a determination of which one of a first treatment and a second treatment to perform based on the treatment object substrate. In response to the determination determining to perform the first treatment, performing the first treatment of decreasing a polarity of the base film to bring it closer to a polarity of the resist solution. In response to the determination determining to perform the second treatment, performing a treatment of increasing the polarity of the base film to bring it closer to the polarity of the resist solution.

Substrate treatment method and substrate treatment system

There is provided a mask forming method, including: forming a photosensitive organic film on a workpiece; generating a first region and a second region in the photosensitive organic film by performing a selective exposure and a post-exposure baking on the photosensitive organic film, the first region having an acidic functional group in the photosensitive organic film, and the second region having a protective group in which the acidic functional group is protected; forming a salt in the first region by causing a basic substance to permeate into the first region using a substance staying in a gaseous state or a solid state; and removing the first region by dissolving the salt in a developer.

Mask forming method

This method for processing a target object includes steps STto ST. The target object has an organic polymer layer and a resist mask on a substrate. In step ST, the target object is electrostatically attached to an electrostatic chuck in a plasma processing apparatus. In step ST, the organic polymer layer is etched through the resist mask by means of a plasma of a first gas. In step ST, the target object is detached from the electrostatic chuck while a plasma of a second gas is generated. In step, the resist mask is peeled off. The second gas is either oxygen gas or a mixture of oxygen gas and a rare gas having an atomic weight lower than that of argon gas.

Method for processing target object

The present invention is configured to: form, on a substrate, a neutral layer having an intermediate affinity to a hydrophilic polymer and a hydrophobic polymer; form a resist pattern by performing exposure processing on a resist film formed on the neutral layer and then developing the resist film after the exposure processing; perform a surface treatment on the resist pattern by supplying an organic solvent having a polarity to the resist pattern; apply the block copolymer onto the neutral layer; and phase-separate the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer.

Substrate treatment method, computer storage medium, and substrate treatment system

A solvent such as PGMEA is coated on a wafer in advance to easily spread resist liquid onto the wafer on a spin chuck. Before coating, the solvent supplied from a solvent supply source is stored in a distill tank first, the solvent is heated by a heating unit to be evaporated, and the evaporated solvent is cooled by a cooler, thereby performing the purification of the solvent by distillation. Therefore, particles among the solvent are removed. The purified solvent is stored in a storage tank first, and then supplied to a solvent nozzle above the spin chuck from a solvent supplying line. And then, the solvent is coated on the wafer by ejecting the solvent from the solvent nozzle to the wafer. Further, the distill tank is cleaned periodically to suppress the increase of the concentration of the particles in the solvent.

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Kumamoto, Japan

Soichiro Okada