Hitachi, Ltd.

Hitachi-high-technologies Corporation

Nippon Tokushu Kent Co., Ltd.

Soichi Katagiri

Shigeo Moriyama

Tsuneo Terasawa

Kan Yasui

Takashi Ohshima

Masaaki Itou

Sadayuki Nishimura

Takashi Kugaya

Yoshihiro Ishida

Shigeo Ootsuki

Ryosei Kawai

Mitsugu Sato

Hiroshi Fukuda

Yasuhiro Yoshitake

Yoshitada Oshida

Keiji Kataoka

Seiji Yonezawa

Seiichi Kondo

Minoru Honda

Toshiei Kurosaki

Norio Saitou

Eiji Takeda

Ui Yamaguchi

Minoru Hidaka

Eiichi Seya

Shuji Sugiyama

Katsuhiko Yamaguchi

Yoshimitsu Saze

Masahiro Kaise

Katsunobu Hama

Massaaki Ito

To provide a small electron gun capable of keeping a high vacuum pressure used for an electron microscope and an electron-beam drawing apparatus. An electron gun constituted by a nonevaporative getter pump, a heater, a filament, and an electron-source positioning mechanism is provided with an opening for rough exhausting and its automatically opening/closing valve, and means for ionizing and decomposing an inert gas or a compound gas for the nonevaporative getter pump. It is possible to keep a high vacuum pressure of 10Torr without requiring an ion pump by using a small electron gun having a height and a width of approximately 15 cm while emitting electrons from the electron gun.

Small electron gun

A charged particle beam apparatus in which an electrostatic lens is used as a main focusing element to obtain a subminiature high-sensitivity high-resolution SEM, a drift tube for an electron beam is located inside a column between an electron source and a sample, and a detector for secondary electrons is located inside the drift tube. This solves the problem associated with the provision of a secondary electron detector, which heretofore has been a bottleneck in making a subminiature high-resolution SEM column.

Charged particle beam apparatus

The present invention relates to a polishing apparatus, and a semiconductor manufacturing method using the apparatus. Dressing of a grindstone surface is ground by sizing processing whereby dressing of a tool surface can be done while preventing occurrence of cracks on the grindstone surface which is the cause for occurrence of scratches. Further, flatness of the surface of a dressing tool can be guaranteed because of sizing cutting-in; even if a thick grindstone of a few centimeters is used, the flatness can be maintained to the end; and processing with less in-face unevenness can be always carried out. Therefore, the life of the dressing tool can be greatly extended. Further, the present sizing-dressing is carried out jointly with processing of a wafer to thereby enable improvement of throughput of the apparatus as well as maintenance of a processing rate. The present apparatus and method are effective for planarization of various substrate surfaces having irregularities.

Polishing apparatus and method for producing semiconductors using the apparatus

The invention provides a method for manufacturing a semiconductor device with reduced dishing and erosion. In this method for manufacturing a semiconductor device, the convex/concave pattern is planarized by relatively moving a substrate having the convex/concave pattern on the surface and a polishing tool with pressing the convex/concave surface of the substrate on the polishing tool. The polishing tool is provided with a grindstonehaving a plurality of polygonal segments, which comprises abrasivethat is bonded together with resinand contains pores. The polygonal segments are arranged so that corners of three or more polygonal segments are not located near each other.

Method for manufacturing a semiconductor device that includes planarizing with a grindstone that contains fixed abrasives

In the polishing machine 10 for pressing the polished surface 7 of the workpiece 1 against the face where there are abrasives 15 of the rotating polishing tool 11 and executing chemical mechanical polishing, the brushing device 30, the cleaner 40, the abrasive supplier 52, and the pure water supplier 60 are sequentially arranged behind the location of the head 20 for pressing the workpiece 1 against the polishing tool 11 in the rotational direction. The cleaner 40 sprays the cleaning water 47 to the face where there are abrasives 15 of the rotating polishing tool 11 and sucks and collects it by the vacuum hole 45. Fresh slurry 62 is always supplied by the slurry supplier 63 comprising the abrasive supplier 52 and the pure water supplier 60.

Polishing method for semiconductors and apparatus therefor

A technique and exposure apparatus measures, with a high degree of accuracy, figure and placement errors of individual optical elements constituting optics embedded inside of an exposure apparatus or the like, with the optics kept in an embedded state as they are. The system measures the distribution of wavefront distortions in the optics while changing the positions of a light source and an image point inside an exposure field of the optics being observed. Optimal displacements of reflective surfaces constituting the optics are then found by calculation based on the measured distribution of wave-front distortions. Finally, the positions of the reflective surfaces are corrected in accordance with the calculated optimal displacements. The positions of the reflective surfaces are corrected by individually controlling displacements output by a plurality of actuators attached to each reflective surface and by mechanically modifying appropriate portions of the reflective surfaces.

Methods for measuring optical system, and method and apparatus for

A semiconductor wafer includes a top surface on which a semiconductor circuit pattern is to be fabricated, and a bottom surface on which alignment marks for positioning the semiconductor circuit pattern are arranged. The alignment marks are arranged at a predetermined pitch and in an arrangement that is not unique to the pattern formed on the top surface.

Workpiece having alignment marks for positioning a pattern at a

Method of forming patterns and apparatus for carrying out the same

In printing patterns on a mask onto a wafer with high accuracy via a reflective reduction projection optical system by using an X-ray or vacuum ultraviolet beam there is an elliptical mirror having a source position defined in an X-ray source and a position of reflection image of entrance pupil of an imaging optical system with respect to the mask as foci and introducing means for synchronously scanning the mask and wafer. Due to inserting a plane mirror for bending an X-ray by approximately 90.degree. at at least one point in the imaging optical system so that the plane of incidence may be perpendicular to the polarization plane the reflectivity does not lower even when the angle of incidence is 45.degree.. A reflecting mirror or an X-ray filter having a lower reflectivity in the peripheral part thereof as compared with the reflectivity of the central part thereof in the stop position of the imaging optical system, brings about an effect of lessened influence of mutual interference between adjacent pattern provides pattern printing with high shape accuracy.

X-ray pattern masking by a reflective reduction projection optical system

A method for detecting position detection marks on the bottom surface of a sample substrate and for determining the pattern forming positions on the top surface of the sample on the basis of the detected mark positions makes it possible to virtually eliminate the measurement errors caused by sample tilt in the position measurements regarding the sample top surface. When the sample tilts, a positional difference occurs between the top and bottom surfaces of the sample, and errors are accordingly generated in the position measurements from the sample top surface. According to the invention, the mark position measurements from the sample bottom surface are made to contain a deviation that varies with the tilt angle of the sample. The deviation is used to cancel the errors in the measured positions.

Method of position detection and the method and apparatus of printing

The present invention resides in method and apparatus for measuring a minute displacement, comprising applying a light of a first wavelength at a predetermined angle to a diffraction grating formed on an object whose position is to be detected, subjecting each of the resulting diffracted light and regular reflected light and a light of a second wavelength different from the first wavelength to heterodyne interference with each other to generate a measurement signal and a reference signal, and measuring a phase difference between the measurement signal and the reference signal to thereby determine a minute displacement of the object.

Method and apparatus for measuring minute displacement by subject light

An optical projection printing apparatus which can irradiate a mask with light from a first light source to focus the mask pattern on a resist of a semiconductor wafer in a highly accurate alignment by a first optical system including a projection lens. A wafer mark formed on the wafer to have a grating pattern shape is arranged to have its grating pitch direction located in the sagittal plane of the first optical system. The wafer mark is irradiated with the light coming from a second light source having a wavelength different from that of the first light source. Of the reflected light from the wafer mark, only the .+-. 1st order diffraction light is extracted by a filter and partially superposed on the mask in a transversely misaligned state so that the reflected light from the wafer mark may be focused by a second optical system. The aforementioned filter is disposed in the Fourier plane of the second optical system.

Optical projection printing apparatus wherein wafer mark has a grating

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Kodaira, Japan

Soichi Katagiri