Lam Research Corporation

Siyuan Tian

Eric A Pape

Donald J Miller

Jorge Luque

Tao Zhang

Changyou Jing

Dmitry Opaits

Jorge Jose Zaninovich

Yuma Ohkura

Jeffrey D Bonde

Matthew Claussen

A sensor probe includes an elongated body defining an inner cavity having an inner diameter. A printed circuit board is configured to be fitted within the inner cavity. A first temperature-sensing integrated circuit mounted at a first end of the printed circuit board. A cap is mounted to a first end of the elongated body adjacent to the first temperature-sensing integrated circuit. A housing is configured to receive a second end of the elongated body, wherein the housing is configured to be mounted to a baseplate of a substrate support.

RF immune sensor probe for monitoring a temperature of an electrostatic chuck of a substrate processing system

A substrate support for a plasma chamber includes a base plate arranged along a plane, a first layer of an electrically insulating material arranged on the base plate along the plane, a plurality of heating elements arranged in the first layer along the plane, and a plurality of diodes arranged in respective cavities in the first layer. The plurality of diodes are connected in series to the plurality of heating elements, respectively. Each of the plurality of diodes includes a die of a semiconductor material arranged in a respective one of the cavities. The semiconductor material has a first coefficient of thermal expansion. A first side of the die is arranged on the first layer along the plane. A first terminal of the die is connected to a first electrical contact on the first layer.

Long-life extended temperature range embedded diode design for electrostatic chuck with multiplexed heaters array

An electrical connector includes first, second, third, and fourth electrical conductors. The first, second, third, and fourth electrical conductors each include a first end to be electrically connected to a respective electrically conductive pad formed on a surface of a ceramic layer of a substrate support and a second end to be electrically connected to a respective wire within a through hole in the substrate support. The electrical connector also includes a retainer to hold the first, second, third, and fourth electrical conductors in place.

Connector for substrate support with embedded temperature sensors

Various embodiments include a reflectometer and a reflectometry system for monitoring movements of a substrate, such as a silicon wafer. In one embodiment, a reflectometry system monitors and controls conditions associated with a substrate disposed within a process chamber. The process chamber includes a substrate-holding device having an actuator mechanism to control movement of the substrate with respect to the substrate-holding device. The reflectometry system includes a light source configured to emit a beam of light directed at the substrate, collection optics configured to receive light reflected from the substrate by the beam of light directed at the substrate and output a signal related to one or more conditions associated with the substrate, and a processor configured to process the signal and direct the actuator mechanism to control the movement of the substrate with respect to the substrate-holding device based on the signal. Other devices and methods are disclosed.

Reflectometer to monitor substrate movement

Various embodiments include apparatuses to raise and lower substrates, as used in the semiconductor and allied industries, toward or away from a substrate-holding mechanism (e.g., such as an electrostatic chuck (ESC). In a specific embodiment, a substrate lift-mechanism includes a number of pins to position the substrate above a substrate-holding device. Mid-position sensors are respectively coupled to a corresponding pin. The mid-position sensors monitor an intermediate position of the corresponding pin between a maximum position and a minimum position. Other apparatuses and systems are disclosed.

Two-stage pin lifter for de-chuck operations

A connection terminal for a heating element of a substrate support in a substrate processing system include a contact plate configured to be electrically connected to a contact pad of the heating element within a ceramic layer of the substrate support. A wire connection portion extends from the contact plate and is configured to receive and retain a wire arranged to provide electrical power to the heating element. At least one of the contact plate and the wire connection portion comprises a first material having a first coefficient of thermal expansion (CTE) that is within 20% of a second CTE of the ceramic layer.

Long-life high-power terminals for substrate support with embedded heating elements

A substrate support for a plasma system includes a first layer being made of a ceramic and having a first surface and a second surface opposite the first surface. The first layer is configured to support a substrate on the first surface during processing. A thermal heating element is embedded within the ceramic. A temperature sensor that is embedded within the ceramic. Electrically conductive pads are: electrically connected to the temperature sensor via first wires embedded in the ceramic; and formed on the second surface of the first layer. A second layer includes a through hole through the second layer. A connector extends through the through hole and that includes: a retainer; and electrical conductors that are held by the retainer and that include: first ends that are electrically connected to the electrically conductive pads, respectively; and second ends that are electrically connected to a temperature controller by wire.

A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level of another RF generator. Another interface receives a temperature signal indicating a temperature of a substrate support. The compensation controller generates a compensation value based on a bias feed-forward transfer function and the bias RF power level and another compensation value based on a plasma feed-forward transfer function and the plasma RF power level. A summer generates an error signal based on a set point and the temperature. The second controller generates a control signal based on the error signal. Another summer controls an actuator to adjust the temperature based on the compensation values and the control signal.

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Fremont, CA, United States of America

Siyuan Tian