Lam Research Corporation

Applied Materials, Inc.

Siyi Li

Peter K Loewenhardt

Sean S Kang

Helen H Zhu

Yifeng Zhou

Thomas S Choi

Howard Dang

Zhilin Huang

Robin W Cheung

S M Reza Sadjadi

Michael D Armacost

Gerardo Delgadino

Qingjun Zhou

James R Bowers

Gowri Kamarthy

Bi-Ming Yen

Robert C Hefty

Mark Todhunter Robson

Scott Briggs

Tae Won Kim

Terry Leung

Ming-Shu Kuo

Tri Le

Audrey Charles

Sm Rega Sadjadi

Ratndeep Srivastava

A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H. A plasma is formed from the treatment gas. The patterned via holes are rounded to form patterned rounded via holes by exposing the patterned via holes to the plasma. The flow of the treatment gas is stopped. The plurality of patterned rounded via holes are transferred into the etch layer.

Method for providing vias

A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etch gas, wherein the silicon etch gas comprises SFor SiF, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas.

Silicon on insulator etch

Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a method for removing masking materials from a substrate includes providing a substrate having exposed low-k materials and a masking material to be removed; exposing the masking material to a first plasma formed from a reducing chemistry for a first period of time; and exposing the masking material to a second plasma formed from an oxidizing chemistry for a second period of time. The steps may be repeated as desired and may be performed in reverse order. Optionally, at least one diluent gas may be added to the oxidizing chemistry.

Method for removing masking materials with reduced low-k dielectric material damage

A substrate comprising a resist layer overlying a dielectric feature, is processed in a substrate processing chamber comprising an antenna, and first and second process electrodes. A process gas comprising COis introduced into the chamber. The process gas is energized to form a plasma by applying a source voltage to the antenna, and by applying to the electrodes, a first bias voltage having a first frequency of at least about 10 MHz and a second bias voltage having a second frequency of less than about 4 MHz. The ratio of the power level of the first bias voltage to the second bias voltage is sufficient to obtain an edge facet height of the underlying dielectric feature that is at least about 10% of the height of the dielectric feature.

Plasma for resist removal and facet control of underlying features

Methods for removing a BARC layer from a feature are provided in the present invention. In one embodiment, the method includes providing a substrate having a feature filled with a BARC layer in an etching chamber, supplying a first gas mixture comprising NHgas into the chamber to etch a first portion of the BARC layer filling in the feature, and supplying a second gas mixture comprising Ogas into the etching chamber to etch the remaining portion of the BARC layer disposed in the feature.

Two step etching of a bottom anti-reflective coating layer in dual damascene application

Methods for post-etch deposition on a dielectric film are provided in the present invention. In one embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in a etch reactor, etching the low-k dielectric layer in the etch reactor, and forming a protection layer on the etched low-k dielectric layer. In another embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in an etch reactor, etching the low-k dielectric layer in the reactor, bonding the etched low-k dielectric layer with a polymer gas supplied into the reactor, forming a protection layer on the etched low-k dielectric layer, and removing the protection layer formed on the etched low-k dielectric layer.

Methods for post-etch deposition of a dielectric film

A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.

Preventing damage to low-k materials during resist stripping

The invention relates to the etching of a dielectric layer in an integrated circuit (IC) structure having a patterned metal hard mask layer. The method comprises feeding a gas mixture that includes a carbon monoxide (CO) and at least one fluorocarbon gas mixture into a reactor. The gas mixture has no oxygen (O) gas. The gas mixture is then converted into a plasma. The plasma selectively etches the dielectric layer. Typically, the dielectric layer comprises silicon.

Etching a dielectric layer in an integrated circuit structure having a metal hard mask layer

The invention is a method of etching an integrated circuit (IC) structure that includes a metal hard mask layer. The etching of the metal hard mask layer is performed by first feeding a gas mixture comprising a fluorine containing gas and oxygen (O) gas to a reactor. The method then proceeds to generate a plasma that etches the metal hard mask layer. The method can be applied to either performing a via etch or a trench etch. Additionally, the invention teaches the removal of a photoresist layer without affecting the metal hard mask layer.

Etching a metal hard mask for an integrated circuit structure

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Fremont, CA, United States of America

Siyi Li