Stmicroelectronics S.r.l.

Novellus Systems Incorporated

Simona Petroni

Yuh-Jia (Jim) Su

David L Chen

Simone Alba

Senzi Li

Eddie Ka Ho Chiu

Maria Paola Pozzoli

Giuseppe Colangelo

Lorenzo Baldo

Chantal Combi

Anna Angela Pomarico

Angela Pomarico

The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF, generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used. Embodiments of the invention are performed after an etch, such as a metal etch, via etch, contact etch, polysilicon etch, nitride etch or shallow trench isolation etch has been performed. Photoresist may be removed either prior to, during, or after cleaning processes according to embodiments of the invention, using an oxygen-containing plasma. Photoresist removal may be performed at low temperatures.

Method for post-etch cleans

The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used. Embodiments of the invention are performed after an etch, such as a metal etch, via etch, contact etch, polysilicon etch, nitride etch or shallow trench isolation etch has been performed. Photoresist may be removed either prior to, during, or after cleaning processes according to embodiments of the invention, using an oxygen-containing plasma. Photoresist removal may be performed at low temperatures.

Methods for post etch cleans

A surface acoustic wave pressure sensor includes: a substrate and at least one flexible membrane, suspended over a cavity defined in the thickness of the substrate, the membrane being elastically deformable by a pressure applied by a fluid and being defined between a first surface facing the cavity and a second opposite surface; a SAW device comprising a layer of piezoelectric material arranged on the second surface of the membrane, the SAW device further comprising at least one SAW electro-acoustic transducer formed on one free surface of the piezoelectric layer. The piezoelectric layer is formed by deposition of piezoelectric material on the membrane and the substrate is integrated in a chip of semiconductor material, the membrane being a layer of the chip suspended over the cavity.

Surface acoustic wave pressure sensor

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Lecce, Italy

Simona Petroni