Carl Zeiss Smt Gmbh

Simon Haas

Joachim Hartjes

Kerstin Hild

Moritz Becker

Bjoern Liebaug

An optical arrangement () for EUV radiation includes: at least one reflective optical element () having a main body () with a coating () that reflects EUV radiation (). At least one shield () is fitted to at least one surface region () of the main body () and protects the at least one surface region () against an etching effect of a plasma (H+, H*) that surrounds the reflective optical element () during operation of the optical arrangement (). A distance (A) between the shield () and the surface region () of the main body () is less than double the Debye length (&#x3bb;), preferably less than the Debye length (&#x3bb;), of the surrounding plasma (H+, H*).

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Pfaffenhofen an der Ilm, Germany

Simon Haas