Indium Corporation

Sihai Chen

Ning-Cheng Lee

Elaina J Zito

Runsheng Mao

David Bedner

Some implementations of the disclosure are directed to a thermal interface material. In some implementations, a method comprises: applying a solder paste between a surface of a heat generating device and a surface of a heat transferring device to form an assembly; and reflow soldering the assembly to form a solder composite, wherein the solder composite provides a thermal interface between the heat generating device and the heat transferring device, wherein the solder paste comprises: a solder powder; particles having a higher melting temperature than a soldering temperature of the solder paste, wherein the solder paste has a volume ratio of solder powder to high melting temperature particles between 5:1 and 1:1.5; and flux.

Lead-free solder paste as thermal interface material

A sintering paste includes solvent and nanomicrocrystallite (NMC) particles. Each NMC particle is a single crystallite having at least one dimension in the range of 1 nm to 100 nm and at least one dimension in the range of 0.1 &#x3bc;m to 1000 &#x3bc;m. The sintering paste may be used in a pressureless sintering process to form a low porosity joint having high bond strength, high electrical and thermal conductivity, and high thermal stability.

Nanomicrocrystallite paste for pressureless sintering

A process of making efficient metal bump bonding with relative low temperature, preferably lower than the melting point of Indium, is described. To obtaining a lower processing temperature (preferred embodiments have a melting point of &#x3c;100&#xb0; C.), a metal or alloy layer is deposited on the indium bump surface. Preferably, the material is chosen such that the metal or alloy forms a passivation layer that is more resistant to oxidation than the underlying indium material. The passivation material is also preferably chosen to form a low melting temperature alloy with indium at the indium bump surface. This is typically accomplished by diffusion of the passivation material into the indium to form a diffusion layer alloy. Various metals, including Ga, Bi, Sn, Pb and Cd, that can be used to form a binary to quaternary low melting point alloy with indium. In addition, diffusion of metal such as Sn, Sn&#x2014;Zn into Ga&#x2014;In alloy; Sn, Cd, Pb&#x2014;Sn into Bi&#x2014;In alloy; Cd, Zn, Pb, Pb&#x2014;Cd into Sn&#x2014;In alloy can help adjust the melting point of the alloy.

Metal coating for indium bump bonding

A high emissive paint comprises organic materials with different functional groups, one or more inorganic materials, and optionally other paint property adjusting agents. The infrared absorption range of the paint derives from organic functional groups, such as C&#x2014;C, C&#x2014;H, N&#x2014;H, C&#x2014;N, C&#x2014;O and C&#x2014;X groups, and the one or more inorganic materials. One or more inorganic materials may also be present as micro- or nano-sized particles.

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New Hartford, NY, United States of America

Sihai Chen