Hrl Laboratories, LLC

Sieu Ha

Wonill Ha

Maxwell Choi

Clayton Jackson

Matthew Borselli

Christopher Bohn

Maggy Lau

Melanie Sachiko Yajima

Melanie Yajima

One or more embodiments of the present disclosure are directed toward improved methods of fabricating a semiconductor device utilizing multi-level electron beam lithography (e-beam lithography), an alignment marker for multi-level e-beam lithography, and a semiconductor device including the alignment marker. A method of fabricating a semiconductor device may include: forming an alignment marker in a substrate, the alignment marker including tantalum; determining, utilizing a backscatter electron detector of an electron beam lithography tool, a location of an edge of the alignment marker based on an atomic number contrast between the alignment marker and the substrate; and forming, utilizing the electron beam lithography tool, at least one transistor in the substrate based on the location of the edge of the alignment marker.

Embedded high-z marker material and process for alignment of multilevel ebeam lithography

Embedded high-Z marker material and process for alignment of multilevel ebeam lithography

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Los Angeles, CA, United States of America

Sieu Ha