Genus, Inc.

Sien G Kang

Johannes J Schmitz

Frank Otto Uher

Raymond L Chow

Edward L Sill

Hector Velasco

Edward J Rode

John Y Adachi

David Badt

Norman L Turner

Steven C Selbrede

Frederick J Scholz

Processing of substrates in a CVD reactor system wherein tungsten silicide is deposited is accomplished with preflow and postflow of reducing gases before and after deposition steps to ensure that tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. For systems having a remote gas injection and flow control system connected by a gas supply manifold to a CVD reactor chamber, an isolation valve is provided in the gas supply manifold, and the valve is held closed during at least a portion of time between deposition sequences.

Apparatus and methods for minimizing as-deposited stress in tungsten

Methods for minimizing as-deposited stress in tungsten silicide films

Apparatus including a support and purge gas supply prevents edge and backside coating on a wafer in manufacture of integrated circuits. Various enclosure elements and methods are disclosed for containing and directing purge gas, and a CVD system is provided incorporating the elements of the invention.

Purge gas in wafer coating area selection

A system for depositing a film on a substrate in a CVD process has a second-source injection sub-system for injecting a control gas. The deposition rate of the material deposited in the CVD process is a function of the concentration of the control gas at the point that material is deposited. The second source injection sub-system provides a concentration gradient of the control gas relative to the substrate surface coated, and alters the thickness uniformity of the film. By controlling the gradient one may control the thickness uniformity profile. In another embodiment, the invention applies to dry etching with reactive gas, and the etching rate is controlled by second source provision of a control gas.

Film uniformity by selective pressure gradient control

A chemical vapor deposition process performed at a temperature below 440 degrees C. for blanket tungsten deposition as a step in manufacturing integrated circuits deposits an integrated film suitable for voidless fill of vias as small as 0.5 microns in width and with aspect ratios of more than 2, while providing resistivity well below 100 micro-ohms per square, film stress generally in the mid 7E+09 dynes per square centimeter and below, and reflectivity of more than 40%, measured relative to silicon at 436 nanometer wavelength for 1 micron film thickness, while avoiding the use of nitrogen in the process.

Low-temperature low-stress blanket tungsten film

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Tracy, CA, United States of America

Sien G Kang