Lam Research Corporation

Other

Novellus Systems Incorporated

Si Yi Li

S M Reza Sadjadi

James V Tietz

Helen H Zhu

Sean S Kang

Thomas W Mountsier

James R Bowers

David R Pirkle

Michael Goss

Vinay Pohray

Chiu Chi

Stephan Lassig

Bryan A Helmer

Anjanappa Muniswamappa

Ashwini Anjanappa

Muneer Baig

Use of multiple-slope and/or multiple-offset mechanism or equivalent to address the issues with current mechanical clickers that have single-slope spring mechanism. The varying-slope can be a continuously varying-slope non-linear spring, or a combination of discretely varying multiple-slope springs. This inventior is useful for clicker type torque wrenches, clicker type torque screw drivers, beam type torque wrenches, beam type torque screw drivers and shock absorbers. The present invention is equally applicable to clickers that click in both the CW (clockwise) and CCW (counterclockwise) directions or clickers that click only in one direction. The invention is generally characterized by placing a non-linear spring or combination of springs in the tool body to achieve multiple slope operation rather than using one single slope spring.

Multiple-slope or multiple-offset tool mechanism

A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluorocarbon reactant and nitrogen reactant being supplied to a chamber of a plasma etch reactor at flow rates such that the fluorocarbon reactant flow rate is less than the nitrogen reactant flow rate. The etch rate of the low-k dielectric layer can be at least 5 times higher than that of a silicon dioxide, silicon nitride, silicon oxynitride or silicon carbide mask layer. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.

Method of plasma etching low-k dielectric materials

A process for plasma etching silicon carbide with selectivity to an overlying and/or underlying dielectric layer of material. The dielectric material can comprise silicon dioxide, silicon oxynitride, silicon nitride or various low-k dielectric materials including organic low-k materials. The etching gas includes a chlorine containing gas such as Cl, an oxygen containing gas such as O, and a carrier gas such as Ar. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrate.

Plasma etching of silicon carbide

A system and method for achieving a silicon carbide to low-k dielectric etch selectivity ratio of greater than 1:1 using a chlorine containing gas and either hydrogen (H) gas or nitrogen (N) gas is described. The method is applied to a semiconductor substrate having a low-k dielectric layer and a silicon carbide layer. The chlorine containing gas is a gas mixture that includes either HCl, BCl, Cl, or any combination thereof. In one embodiment, the method provides for supplying an etchant gas comprising a chlorine containing gas and a hydrogen (H) gas. The etchant gas is then energized to generate a plasma which then etches openings in the silicon carbide at a faster etch rate than the low-k dielectric etch rate. In an alternative embodiment, the etchant gas mixture comprises a chlorine containing gas and a nitrogen (N) gas.

Method for etching silicon carbide

A method of forming a damascene structure above a substrate is provided. A low-k dielectric layer is formed over the substrate, wherein the low-k dielectric layer does not have a trench stop layer. A plurality of vias are etched through the low-k dielectric layer. Via plugs are formed in the plurality of vias. A plurality of trenches are etched into the low-k dielectric layer, wherein the etching with sufficiently high via plugs minimizes facet formation at the tops of vias exposed to the etch and wherein the trench etch process removes fences caused by the via plugs. The via plugs are stripped.

Method for patterning multilevel interconnects

The invention provides a process for plasma etching silicon carbide with selectivity to an overlapping and/or underlying dielectric layer of material. The etching gas includes a hydrogen-containing fluorocarbon gas such as CH F, an oxygen-containing gas such as O and an optional carrier gas such as Ar. The dielectric material can comprise silicon dioxide, silicon nitride, silicon oxynitride or various low-k dielectric materials including organic low-k materials. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrates.

Method of plasma etching of silicon carbide

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Fremont, CA, United States of America

Si Yi Li