Basf Se Corporation

Shyam Sundar Venkataraman

Yuzhuo Li

Vijay Immanuel Raman

Eason Yu-Shen Su

Mingjie Zhong

Christian Schade

Andreas Klipp

Michael Lauter

Arend Jouke Kingma

Bastian Marten Noller

Sheik Ansar Usman Ibrahim

Xu Yuan Peng

Domnik Bayer

Raimund Mellies

Daniel Kwo-Hung Shen

Andreas Haas

Wei Lan William Chiu

Rosalba Adriana Ricon-Ovalles

Harvey Wayne Pinder

Jea-Ju Chu

The present invention relates to a metal-doped tin oxide which has a BET surface area of at least 30 m 2/g, and comprises at least one metal dopant which is Sb, Nb, Ta, Bi, W, or In, or any mixture thereof, wherein the metal dopant is present in an amount of from 2.5 at % to 25 at %, based on the total amount of tin and metal dopant atoms, and is in a mixed valence state containing atoms of oxidation state OS1 and atoms of oxidation state OS2, wherein the oxidation state OS1 is &#x3e;0 and the oxidation state OS2 is &#x3e;OS1 and the atomic ratio of the atoms of OS2 to the atoms of OS1 is from 1.5 to 12.0.

Metal-doped tin oxide for electrocatalysis applications

An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)/(B2)Y](I), wherein the indices and the variables have the following meaning: m, n, and p integers&#x2267;1; R hydrogen atom or monovalent or polyvalent organic residue, except C-Calkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C-Calkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.

Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films

A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(&#x2550;O)(OR1)(OR2) or phosphonic acid (P(&#x2550;O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives

A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (&#x2014;SH), thioether (&#x2014;SR) or thiocarbonyl (&#x3e;C&#x2550;S) group, wherein Ris alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (&#x2014;OH) groups and does not comprise any carboxylic acid (&#x2014;COOH) or carboxylate (&#x2014;COO&#x2014;) groups, and (C) an aqueous medium.

Post chemical-mechanical-polishing (post-CMP) cleaning composition comprising a specific sulfur-containing compound and a sugar alcohol or a polycarboxylic acid

Aqueous, nitrogen-free cleaning composition, preparation and use thereof are provided. The composition having a pH of from 5 to 8 comprises (A) an amphiphilic nonionic, water-soluble or water-dispersible surfactant and (B) a metal chelating agent selected from polycarboxylic acids having at least 3 carboxylic acid groups. The composition is used for removing residues and contaminants from semiconductor substrates.

Aqueous, nitrogen-free cleaning composition and its use for removing residues and contaminants from semiconductor substrates suitable for manufacturing microelectronic devices

A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.

Chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles

Provided is a process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a chemical mechanical polishing (CMP) composition which comprises: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of anionic phosphate or phosphonate as dispersing agent or charge reversal agent, (C) at least one type of surfactant, and (D) an aqueous medium.

Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a CMP composition comprising anionic phosphate or phosphonate

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Zhongli, Taiwan

Shyam Sundar Venkataraman