Kabushiki Kaisha Toshiba

Nuflare Technology, Inc.

Other

Shusuke Yoshitake

Toru Tojo

Ryoichi Hirano

Shuichi Tamamushi

Munehiro Ogasawara

Masamitsu Itoh

Kazuto Matsuki

Yoshiaki Tsukumo

Makoto Kanda

Souji Koikari

Yoshiaki Tada

Takayuki Abe

Naoharu Shimomura

Takashi Kamikubo

Rieko Nishimura

Thomas Scheruebl

Masaki Toriumi

Dirk Beyer

Jun Takamatsu

Hiroaki Hirazawa

Shigeru Wakayama

Tadahiro Takigawa

Kaoru Tsuruta

Manabu Isobe

Teruaki Yamamoto

Shuichiro Fukutome

Sven Heisig

A mask inspection apparatus includes an image acquisition mechanism that acquires an optical image of the pattern by making an inspection light incident on an EUV mask and detecting a reflection inspection light reflected from the EUV mask, in a state where the relation between the incident direction of the inspection light used for inspecting the pattern formed on the EUV mask, and the arrangement direction of the EUV mask serving as the inspection substrate is matched with the relation between the incident direction of the EUV light on the EUV mask, and the arrangement direction of the EUV mask in the EUV exposure apparatus.

Mask inspection apparatus, electron beam inspection apparatus, mask inspection method, and electron beam inspection method

A pattern inspection apparatus includes: an optical image acquiring mechanism to acquire optical image data of a corresponding divided pattern for each of masks for multiple patterning has been formed; a position deviation map generating processing circuitry to generate position deviation maps regarding the corresponding divided pattern; a difference position value map generating processing circuitry to generate one difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps; a region specifying processing circuitry to specify at least one region having the difference value exceeding a threshold of distance between patterns laying side-by-side by using the difference position value map; and an output mechanism to output at least coordinates, a type of defect, and information of a reference image of each region specified for the each region specified.

Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image, pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system

A charged particle beam writing apparatus includes a reading unit to read an identifier from a substrate where an absorber film which absorbs extreme ultraviolet light is formed and the identifier which can be optically read is formed, a storage unit to store defect position information indicating a position of a defect on the substrate based on reference marks, defect size information indicating a size of the defect, which are corresponding to the identifier, and pattern data for writing, an examination unit to input partial pattern data corresponding to a region including at least the defect in the pattern data, the defect position information based on reference marks, and the defect size information, and to examine whether a pattern layout is formed such that the defect is located in a region where the absorber film remains after patterning, and a writing unit to write a pattern on the substrate.

Charged particle beam writing apparatus and method therefor

The present invention provides an electron beam writing apparatus and an image placement error correcting method each capable of calculating a high-accuracy correction amount relative to an image placement error in consideration of a difference in required unit area of height distribution data between the shape of a back surface of an EUV mask and the shape of a surface of a pin chuck. Of back surface shape data of the EUV mask necessary to perform an image placement error correction of each pattern, the back surface shape data of a position brought into contact with each pin of the pin chuck is extracted. The image placement error is calculated only from the extracted back surface shape data.

Electron beam writing apparatus and position displacement amount correcting method

The reference mark has steps and is formed on a sample. A stage moves in X and Y directions. The sample M is placed on the stage. An optical lever type height position sensor emits light to detect the reference mark FM' by the stage being scanned. The spot position of light reflected on the sample is detected in position sensitive detector. The X and Y coordinates of the position of the stage positioned when the spot position of the reflected light is changed is detected. The detected X and Y coordinates are regarded as the position C of the reference mark FM&#x2032;. The position of a phase defect D located in the sample M is specified on the basis of the position C of the reference mark FM&#x2032;. The position of a portion on which writing is to be performed is determined on the basis of a relationship with the specified position of the phase defect D.

Charged particle beam writing method, method for detecting position of reference mark for charged particle beam writing, and charged particle beam writing apparatus

A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.

Correcting substrate for charged particle beam lithography apparatus

A position measuring apparatus includes a holder having storage spaces in which a three-point support member for supporting a backside of a substrate being a mask at three points, and a vacuum chuck member for holding a backside of a substrate being a mask are prepared, a stage on which one of the three-point support member and the vacuum chuck member prepared in the storage spaces of the holder is mounted, a vacuum pump to hold and chuck the substrate through the vacuum chuck member in a state of being mounted on the stage, and a recognition unit to recognize a position of a pattern written on the substrate supported by the three-point support member mounted on the stage and a position of a pattern written on the substrate held by the vacuum chuck member on the stage.

Position measuring apparatus and positional deviation measuring method

A charged particle beam writing method includes measuring a topography of a backside of a substrate without an influence of a gravity sag, calculating a first positional deviation amount of a pattern written on a frontside of the substrate in a case of the backside of the substrate having been corrected to be flat, based on the the backside topography of the substrate, calculating a first coefficient of a first approximate expression indicating a positional deviation correction amount for correcting the first positional deviation amount, based on the first positional deviation amount, adding the first coefficient to a second coefficient of a second approximate expression indicating a positional deviation correction amount for correcting a second positional deviation amount of the pattern written on the frontside of the substrate in a case of the backside of the substrate having not been corrected to be flat, and writing the pattern on the frontside of the substrate utilizing a charged particle beam, based on one of a positional deviation correction amount obtained by a third approximate expression indicating a positional deviation correction amount using a third coefficient obtained as a result of the adding, and the positional deviation correction obtained by the second approximate expression.

Writing method and writing apparatus of charged particle beam, positional deviation measuring method, and position measuring apparatus

According to one embodiment of the present invention, the present invention may provide a temperature measuring method in a pattern drawing apparatus having a drawing chamber for drawing a pattern on a substrate to be transferred inside, a stage installed inside the drawing chamber, a standby chamber connected to the drawing chamber, and a thermostatic device installed inside the standby chamber, characterized in that a dummy substrate having a temperature measuring device and a recording device for recording the temperature measured by the temperature measuring device is transferred to the thermostatic device, then transferred into the drawing chamber, and then put on the stage, thus the temperature history of the dummy substrate in the transfer route from the thermostatic device to the stage is measured by the temperature measuring device and recorded in the recording device.

Temperature measuring method in pattern drawing apparatus

A method of transferring a sample to and from a treating chamber kept in a vacuum atmosphere through a pressure regulatively preparatory chamber. The sample is contained in the sample transfer container, which is kept air-permeable by a dust filtering filter, in a cleaned atmosphere before the sample is transferred to the treating chamber. The sample transfer container is transferred into the preparatory chamber, and the inside of the preparatory chamber is evacuated to a vacuum atmosphere. The sample is then extracted from the sample transfer container in the vacuum atmosphere and is transferred into the treating chamber. Also disclosed is an apparatus for supporting the sample transferring method.

Sample transferring method and sample transfer supporting apparatus

A pattern forming apparatus comprising a sample base for positioning a sample on the base and moving a drawing position of the sample, a position measuring unit for measuring a position of the sample base, a correcting unit for mutually independently correcting drawing positions at those respective areas into which a whole drawing section of the sample is divided, the drawing position being calculated by the position measuring unit at the respective area, and a drawing unit for drawing a pattern on the sample on the basis of the position of the sample base measured by the position measuring unit and drawing position of the respective area corrected by the correcting unit.

Pattern forming apparatus

A reflection prevention board of a charged particle beam irradiation apparatus of the present invention comprises a laminate sheet having a plurality of thin films and a plurality of microholes through the laminate sheet. According to the present invention the reflection prevention board can be manufactured at a lower cost, the reason being that it is easier to form microholes in the thin films and then laminate these thin films in an aligned relation than to drill holes through a thicker sheet. By doing so it is possible to achieve a better yield. Further, much deeper microholes, which might not otherwise be achieved on a thick sheet, can be formed by using more thin films and a reflection prevention effect can be improved by doing so.

Charged particle beam irradiation apparatus

A method of transferring a sample to and from a treating chamber kept in a vacuum atmosphere through a pressure regulative preparatory chamber. The sample is contained in the sample transfer container, which is kept air-permeable by a dust filtering filter, in a cleaned atmosphere before the sample is transferred to the treating chamber. The sample transfer container is transferred into the preparatory chamber, and the inside of the preparatory chamber is evacuated to a vacuum atmosphere. The sample is then extracted from the sample transfer container in the vacuum atmosphere and is transferred into the treating chamber. Also disclosed is an apparatus for supporting the sample transferring method.

A method of manufacturing an electrostatic deflecting electrode unit for use in charged beam lithography apparatus comprises a first step of preparing a hollow cylindrical member made of metal, a second step of forming grooves of a predetermined width in a cylindrical member in the direction of radius thereof and along lines that equally divides the periphery of the cylindrical member into eight sections, a third step of attaching a ring-like member made of an insulating material to each of end surfaces of the cylindrical member which are opposed to each other in the direction of axis of the cylindrical member in such a way that bottom portions of the grooves are exposed, and a fourth step of dividing the cylindrical member into eight electrodes by extending the bottom portions of the grooves in the direction of radius of the cylindrical member to reach the hole of the cylindrical member with the ring-like members attached. The dimensional precision of the electrostatic deflecting electrode is determined by the precision of the cylindrical member. Thus, the deflecting electrode unit is easy to process and assemble with precision.

Electrostatic deflecting electrode unit for use in charged beam

An object of the present invention is to provide a charged particle exposure system which can prevent the shift of an orbit of an electron beam in the vicinity of a periphery of a substrate when drawing a pattern onto the substrate, thereby making it possible to draw the pattern with high accuracy. According to the present invention, there is provided a charged particle beam exposure system comprising a holder for holding a substrate, a beam source for emitting a charged particle beam onto a surface of the substrate, beam scanning means for scanning the charged particle beam to draw a pattern on the surface of the substrate, a first electrical conductive block coming in electrical contact with a surface of a peripheral portion of the substrate, a first DC power supply unit for supplying an arbitrary voltage to the first electrical conductive block, a second electrical conductive block arranged to cover upside of the first electrical conductive block and upside of a peripheral portion along the periphery of the substrate, and to be electrically insulated from the substrate, and a second DC power supply unit for supplying the other arbitrary voltage to the second electrical conductive block.

Growing community of inventors

Yokohama, Japan

Shusuke Yoshitake