Tokyo Electron Limited

Shusei Kato

Nobutaka Sasaki

Wataru Shimizu

Lifu Li

Gyeong Min Park

Takashi Aramaki

Toshiki Akama

Ryota Koitabashi

There is a plasma processing apparatus, comprising: a plasma processing chamber; a substrate support having a ring supporting surface; an insulating ring disposed on the ring supporting surface, the insulating ring having at least three through holes, each of the through holes having upper and lower hole portions, the lower hole portion having a flaring shape; a conductive ring supported by the insulating ring, the conductive ring having at least three grooves on a lower surface, the grooves corresponding to the through holes; at least three lift pins disposed below the ring supporting surface, the lift pins corresponding to the grooves, each of the lift pins having upper and lower supporting portions, the upper supporting portion being configured to support the conductive ring, the lower supporting portion configured to support the insulating ring; and at least one actuator configured to vertically move the pins.

Plasma processing apparatus

A substrate processing system includes a plasma processing apparatus, a decompression transferrer coupled to the plasma processing apparatus, and control circuitry that controls a transfer robot to load an edge ring into a process chamber and to transfer the edge ring to a lift assembly, controls the lift assembly to lower the edge ring onto a ring support surface, controls an electrostatic chuck to electrostatically clamp the edge ring onto the ring support surface, and controls a plasma generator to generate plasma in the process chamber and stabilize the electrostatically clamping of the edge ring onto the electrostatic chuck before performing plasma processing on a product substrate, the stabilizing includes controlling a power source to apply pulsed direct current voltage to the substrate support, including applying a first bias voltage and applying a second bias voltage higher than the first bias voltage after applying the first bias voltage.

Substrate processing system and method for installing edge ring

Growing community of inventors

Miyagi, Japan

Shusei Kato