Disco Corporation

Disco Corportation

Shunsuke Teranishi

Akihito Kawai

Youngsuk Kim

Byeongdeck Jang

Shuichiro Tsukiji

Zhiwen Chen

Yuki Ikku

Kyosuke Kobinata

Satoshi Kobayashi

Atsushi Ueki

Shigefumi Okada

Nobumori Ogoshi

Yuriko Sato

Yasuhiro Shimma

There is provided a method of manufacturing package devices, including a first substrate preparing step of preparing a first substrate in which a device chip is mounted in each of a plurality of mounting areas, a second substrate preparing step of preparing a second substrate including a plurality of recessed portions that are capable of housing the device chips, a bonding step of bonding the first substrate and the second substrate together in such a manner that the device chips are housed in the recessed portions, a grinding step of grinding the second substrate until the recessed portions are exposed, a resin molding step of supplying resin to the plurality of recessed portions and covering the device chips by the resin, and a dividing step of dividing the first substrate and the second substrate and manufacturing a plurality of package devices each including the device chips.

Method of manufacturing package device

A laminated device wafer forming method includes a laminating step of laminating a first device wafer and a second device wafer to each other, the laminating step including a position adjusting step of imaging, by an imaging unit, a first predetermined line formed on a peripheral portion on the front surface side of the first device wafer and located outside rectangular regions corresponding to devices and a second predetermined line formed on a peripheral portion on the front surface side of the second device wafer and located outside the rectangular regions corresponding to the devices, and adjusting relative positions of the first device wafer and the second device wafer by using the first predetermined line and the second predetermined line.

Laminated device wafer forming method

A laminated device chip manufacturing method includes: a first wafer processing step of exposing a first resin layer disposed in first grooves to an undersurface side of a first wafer by thinning the first wafer fixed to a first support; a laminating step of laminating the undersurface side of the first wafer and a top surface side of a second wafer to each other such that the first resin layer exposed to the undersurface side of the first wafer and a second resin layer disposed in second grooves of the second wafer coincide with each other; a second wafer processing step of exposing the second resin layer disposed in the second grooves to an undersurface side of the second wafer by thinning the second wafer; and a resin layer cutting step of manufacturing laminated device chips by cutting the first resin layer and the second resin layer.

Laminated device chip manufacturing method

A method of manufacturing a layered device chip assembly includes forming first grooves in a first wafer, fixing the first wafer to a support body, grinding the first wafer to expose the first grooves, forming a first resin layer in the first grooves, simultaneously polishing the first wafer and the first resin layer to expose the first resin layer, forming second grooves in the second wafer, the second grooves having a width on the face side larger than a width of the first grooves and a width at groove bottoms that is smaller than the width on the face side of the second wafer, affixing the second wafer to the first wafer, grinding the second wafer to expose the second grooves on the reverse side thereof, forming a second resin layer in the second grooves, and dividing the first wafer and the second wafer into a plurality of assemblies.

Method of manufacturing layered device chip assembly

A method of separating a wafer into at least two thinner wafers includes a pressing member placing step of placing a pressing member that is transmissive of a wavelength of a laser beam on a first surface of the wafer such that the pressing member is pressed against the first surface of the wafer, a separation initiating point forming step of forming a separation initiating point in the wafer by applying the laser beam whose wavelength is transmittable through the wafer to the wafer while positioning a focused spot of the laser beam within the wafer and moving the focused spot and the wafer relatively to each other along a first direction, and an indexing feed step of moving the focused spot and the wafer relatively to each other along a second direction perpendicular to the first direction.

Method of separating wafer

A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a removing step of removing, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a removed region formed by removing the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the removed region.

Wafer manufacturing method and laminated device chip manufacturing method

A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a removing step of separating, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a through hole formed by separating the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the through hole.

A method of processing a wafer includes a groove forming step of forming grooves in the wafer to a depth equal to or larger than a thickness of chips to be produced from the wafer from a face side of the wafer along projected dicing lines, a separation initiating point forming step of positioning a focused spot of a laser at a depth in the wafer corresponding to a thickness of the chips from a reverse side of the wafer, applying the laser beam to the wafer while moving the focused spot and the wafer relatively to each other, thereby forming separation initiating points in the wafer that are parallel to the face side of the wafer and made up of modified layers and cracks, and a chip peeling step of peeling off the chips from the wafer at the separation initiating points.

Method of processing wafer

A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a support substrate fixing step of fixing the wafer to a support substrate, a removing step of removing, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a removed region formed by removing the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the removed region, and fixing the device chip to the support substrate.

A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a removing step of removing, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, a support substrate fixing step of fixing the wafer to a support substrate, and a fitting step of fitting, into a removed region formed by removing the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the removed region, and fixing the device chip to the support substrate.

A wafer processing method for forming a modified layer within a wafer along planned dividing lines forms the modified layer within the wafer, positions a condensing point within the wafer or at a top surface of the wafer and applies a second laser beam while moving the condensing point, images reflected light, and determines a processed state of the wafer on the basis of an imaged image. The second laser beam is formed such that a sectional shape of the second laser beam in a plane perpendicular to a traveling direction of the second laser beam is not axisymmetric with respect to an axis along the planned dividing lines.

Wafer processing method

A wafer processing method for forming a modified layer within a wafer along planned dividing lines forms the modified layer within the wafer, positions a condensing point within the wafer or at the top surface of the wafer and applies a second laser beam while moving the condensing point in a thickness direction of the wafer, images reflected light, and determines the processed state of the wafer on the basis of a photographed image. The second laser beam is formed such that the sectional shape of the second laser beam in a plane perpendicular to the traveling direction of the second laser beam is asymmetric with respect to the modified layer.

Disclosed herein is a using method for a test wafer including a test substrate and a metal foil formed on the front side of the test substrate. The using method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the test substrate from the back side of the test wafer in the condition where the focal point of the laser beam is set inside the test substrate, thereby forming a modified layer inside the test substrate, and a damage detecting step of observing the front side of the test wafer after performing the modified layer forming step, thereby detecting damage to the metal foil.

Growing community of inventors

Tokyo, Japan

Shunsuke Teranishi