Hamamatsu-photonics K.k.

Shizuoka University

Japan Science and Technology Agency

Osaka University

Sanken Electric Co., Ltd.

Shunro Fuke

Masatomo Sumiya

Tokuaki Nihashi

Minoru Hagino

Kazuyoshi Itoh

Tetsuji Matsuo

Yoshihiro Ishigami

Yasuo Kanematsu

Hisashi Matsumura

Mamoru Yoshimoto

Minoru Hamamatsu Photonics K K Hagino

Tokuaki Hamamatsu Photonics K K Nihashi

The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface memberis a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layerwhere the direction from the first surfaceto the second surfaceis the negative c polar direction of the crystal, an adhesive layerformed along the first surfaceof the nitride semiconductor crystal layer, and a glass substratewhich is adhesively fixed to the adhesive layersuch that the adhesive layeris located between the glass substrateand the nitride semiconductor crystal layer

Process for producing layered member and layered member

A semiconductor photocathode includes an AlGaN layer (0&#x2266;X&#x3c;1) bonded to a glass substrate via an SiOlayer and an alkali-metal-containing layer formed on the AlGaN layer. The AlGaN layer includes a first region, a second region, an intermediate region between the first and second regions. The second region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately, the intermediate region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately. When a pair of adjacent barrier and well layers is defined as a unit section, an average value of a composition ratio X of Al in a unit section decreases monotonously with distance from an interface position between the second region and the SiOlayer at least in the intermediate region.

Semiconductor photocathode and method for manufacturing the same

An apparatus () for fabricating a semiconductor thin film includes: substrate surface pretreatment means () for pretreating a surface of a substrate; organic layer coating means () for coating, with an organic layer, the substrate thus pretreated; focused light irradiation means () for irradiating, with focused light, the substrate coated with the organic layer, and for forming a growth-mask layer while controlling layer thickness; first thin film growth means () for selectively growing a semiconductor thin film over an area around the growth-mask layer; substrate surface treatment means () for, after exposing the surface of the substrate by removing the growth-mask layer, modifying the exposed surface of the substrate; and second thin film growth means () for further growing the semiconductor thin film and growing a semiconductor thin film over the modified surface of the substrate.

Method for fabricating semiconductor thin film using substrate irradiated with focused light, apparatus for fabricating semiconductor thin film using substrate irradiated with focused light, method for selectively growing semiconductor thin film using substrate irradiated with focused light, and semiconductor element using substrate irradiated with focused light

The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face () and a N face () are formed over a c face sapphire (AlO) substrate (), the Ga face () growing in +c face, and the N face () growing in &#x2212;c face.

Method for growing thin nitride film onto substrate and thin nitride film device

Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

Photoelectric surface and photodetector

In a method of forming a single crystal semiconductor directly on a metal layer, a metal layer is epitaxially grown on a surface an electrically insulating substrate having a single crystal structure, and a single crystal semiconductor layer is epitaxially grown on the metal layer. Particularly, on a c-face of a sapphire substrate, a platinum layer is epitaxially grown in a crystal orientation of (111) by sputtering, while the sapphire substrate is heat at about 400-700&deg; C. After annealing at 600-900&deg; C., a buffer layer made of gallium nitride is epitaxially grown on the platinum layer with a thickness of 500-2000 &angst; by MOVPE, while the sapphire substrate is heated at about 600&deg; C. Finally, a single crystal gallium nitride layer is epitaxially grown on the buffer layer by MOVPE, while the sapphire substrate is heated at about 1000&deg; C.

Growing community of inventors

Hamamatsu, Japan

Shunro Fuke