Fujitsu Corporation

Shunji Kashiwagi

Naoki Awaji

Satoshi Komiya

X-rays are irradiated to a sample to be measured including at least one layer of film formed on a substrate; an interference oscillation curve of the X-rays incident on the sample to be measured is measured; and a concentration of an element adhered on a surface of the sample to be measured and/or segregated in an interface of the film is measured. The interference oscillation curve is fitted to an analysis formula expressing an X-ray reflectance to thereby determining a density of a region of the sample to be measured, where the element is adhered or is segregated, and a concentration of the element is computed based on the density.

Element concentration measuring method and apparatus, and semiconductor

A film thickness measuring method comprises the steps of measuring reflectances of X-rays on a film, extracting interference oscillations from the measured X-ray reflectances, and Fourier transforming the interference oscillations to compute a film thickness of the film, an average reflectance being given by fitting the measured X-ray reflectances to an analysis formula including a term of a product of a power function of an incident angle, which expresses attenuation of reflectances on a smooth surface of the film and an exponent function which expresses influence of roughness of the surface of the film, and a constant term expressing a background added to the product; the interference oscillations being given by using the measured X-ray reflectances and the average reflectance. The film thickness measuring method can extract interference oscillations of a reflectance curve by a method including arbitrariness and by a simple procedure.

Film thickness measuring and film forming method

A high frequency and high power semiconductor device comprising unit cells of the same shape, connected in parallel and fabricated on a chip. The thermal resistance of the chip is reduced by arranging the unit cells in a zigzag pattern. The zigzag arrangement of the unit cells is such that each unit cell in a line is offset by approximately one-half pitch from the unit cells in neighboring lines. As a result of the zigzag arrangement of the unit cells, the temperature of each unit cell is less influenced by heat from the unit cells in neighboring lines than are unit cells in an orthogonal matrix. In addition, the thermal distribution of the unit cells is improved to prevent hot spots. Using the zigzag arrangement, a single transistor can output over 100 watts C.W. at more than 900 MHz.

High power frequency semiconductor device with improved thermal

A semiconductor chip, including a semiconductor substrate and a radiator plate. An active region is formed on one main surface of the semiconductor substrate. The radiator plate is bonded to the other main surface side of the semiconductor substrate. A recess is formed on the other main surface side so as to dispose the radiator plate therein.

Growing community of inventors

Kawasaki, Japan

Shunji Kashiwagi