Nec Corporation

The Furukawa Electric Co., Ltd.

Fuji Electric Co., Ltd.

Shunichiro Sato

Yoshiaki Yamada

Tetsuya Taguwa

Hidemichi Fujiwara

Naoaki Mihara

Toshiki Shinmura

Tatsuhiko Asai

Naoyuki Kojima

Koji Urabe

Jirou Sugiyama

Kunio Shiokawa

Kazuhito Hikasa

The electrically conductive adhesive agent composition comprises a metal particle (Q) and a prescribed organophosphorus compound (A), and the metal particle (Q) comprises a first metal particle (Q1) made of a single metal selected from the group of copper, nickel, aluminum and tin or an alloy comprising two or more metals selected from said group.

Electrically conductive adhesive agent composition, and electrically conductive adhesive film and dicing-die-bonding film using the same

A miniature contact is incorporated in a semiconductor device for transferring an electric signal between a conductive wiring and an impurity region, and a titanium silicide and a single crystal silicon region doped with an impurity forms an ohmic contact; in order to form the ohmic contact, a surface portion of the single crystal silicon region is made amorphous by using an ion-bombardment, thereafter, titanium is deposited on the amorphous silicon to have the thickness ranging between 3 nanometers and 10 nanometers, and the titanium layer is converted to a titanium silicide layer through an annealing at 400 degrees to 500 degrees in centigrade, thereby forming the low-resistive ohmic contact without changing the impurity profile of the single crystal silicon region.

Process of fabricating semiconductor device having low-resistive contact without high temperature heat treatment

Growing community of inventors

Tokyo, Japan

Shunichiro Sato