Yangtze Memory Technologies Co., Ltd.

Wuhan Guoce Science & Technology Co., Ltd.

Shun Hu

Si Ping Hu

Meng Yan

Jia Wen Wang

Leping Zhang

Zhengliang Bu

Zhengtao Zhao

Tiexin Hou

Zhigui Xu

Youyi Li

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first device layer is formed on a first substrate. A first bonding layer including a first bonding contact and a first bonding alignment mark is formed above the first device layer. A second device layer is formed on a second substrate. A second bonding layer including a second bonding contact and a second bonding alignment mark is formed above the second device layer. The first bonding alignment mark is aligned with the second bonding alignment mark, such that the first bonding contact is aligned with the second bonding contact. The first substrate and the second substrate are bonded in a face-to-face manner, so that the first bonding contact is in contact with the second bonding contact at a bonding interface, and the first bonding alignment mark is in contact with the second bonding alignment mark at the bonding interface.

Bonding alignment marks at bonding interface

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and including a first bonding contact and a first bonding alignment mark. The second semiconductor structure includes a second device layer, and a second bonding layer disposed below the second device layer and including a second bonding contact and a second bonding alignment mark. The first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface.

Bonding alignment marks at bonding in interface

An integrated device suspended at a high voltage potential for the metering and protection of a distribution network comprises a measurement current transformer (CT), a protective CT and a voltage sensor. The voltage signal is output from the voltage sensor to an electric energy metering module and first and second electric signal acquiring modules. The current signal acquired by the measurement CT is output to the electric energy metering module. The current signal acquired by the protective CT is output to the first and second electric signal acquiring modules. The electric energy metering module processes the current and voltage signals and sends the processed data to a comprehensive control module. The first and second electric signal acquiring modules send the voltage and current data to the comprehensive control module. The comprehensive control module comprehensively calculates the received data and sends the result to a low voltage terminal.

Integrated device suspended at high voltage potential for power energy metering and protection of distribution network

Growing community of inventors

Wuhan, China

Shun Hu