Tokyo Electron Limited

Fujikin Inc.

Other

L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Ckd Corporation

Horiba Stec, Co., Ltd.

Ebara Research Co., Ltd.

Tokyo Electron Tohoku Limited

Tokyo Electric Limited

Shuji Moriya

Tsuneyuki Okabe

Michio Yamaji

Tsutomu Shinohara

Takenobu Matsuo

Tsuyoshi Wakabayashi

Tomohiro Nakata

Wataru Okase

Nobukazu Ikeda

Tsuyoshi Moriya

Kazuya Dobashi

Mitsuhiro Tachibana

Toshihide Yoshida

Fumihiko Uesugi

Natsuko Ito

Kyoko Ikeda

Hitoshi Kitagawa

Yukimasa Saito

Yoshinori Kato

Tetsuo Shimizu

Hiroyuki Ebi

Toshiki Hinata

Yasuyuki Omata

Kenichi Sato

Masaru Aomori

Yasutaka Hayashi

Atsushi Ando

Ken Nakao

Satoru Kawakami

Hiroshi Itafuji

Masahiro Ogasawara

Yoshifumi Tahara

Nobuhiro Takahashi

Susumu Tanaka

Masahiko Tomita

Hideki Nagaoka

Kazutoshi Miura

Minoru Ito

Tetsuro Takahashi

Hiroki Doi

Toyohiko Shindo

Jun Sonobe

Junichiro Matsunaga

Hidenobu Arimitsu

Jun Yashiro

Masashi Matsumoto

Takahiro Mori

Akira Miyazaki

Keiji Morita

Sachiyuki Nagasaka

Noboru Tamura

Christopher Turpin

Kazushige Matsuno

A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

Substrate cleaning apparatus

According to the present invention, a substrate processing apparatus has a chamber (), a stage () for holding a substrate (W) to be processed in the chamber (), and a nozzle part () from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber () is performed by: placing a prescribed reflecting member (dW,) in the chamber (), blasting a gas cluster (C) onto the reflecting member (dW,), and applying the gas-cluster flow reflected by the reflecting member (dW,) onto a wall section of the chamber () to remove particles (P) adhered to the wall section of the chamber ().

Method for cleaning chamber of substrate processing apparatus

A substrate processing method includes a fluorine-based gas supply step of supplying a fluorine-based gas into a processing chamber where a substrate having a silicon-based film is accommodated, a purge gas supply step of supplying a purge gas for discharging the supplied fluorine-based gas into the processing chamber. The substrate processing method further includes a nitrogen-based gas supply step of supplying a nitrogen-based gas into the processing chamber from which the fluorine-based gas has been discharged. In the substrate processing method, at least in the fluorine-based gas supply step and the purge gas supply step, a temperature of the substrate is maintained at 60&#xb0; C. or less.

Substrate processing method and substrate processing apparatus

An etching method includes loading a target substrate W into a chamber, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an Ogas into the chamber, while at least the Ogas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the Ogas.

Etching method

A pipe joint for preventing fine particles generated when a male threaded member and a female threaded member are threadedly engaged with each other from entering a fluid passage thus maintaining a high degree of cleanliness. Joint members are joined to each other by a male threaded member formed on one joint member and a female threaded member formed on the other joint member. A cover portion which covers outer peripheral surfaces of abutting portions of both joint members is formed on the male threaded member.

Pipe joint

A pipe joint includes first and second joint members having fluid channels communicating with each other, an annular gasket to be interposed between abutting end surfaces of the both joint members, and a nut configured to couple the joint members. The nut is provided with an inner surface treated layer. The inner surface treated layer includes a Co (cobalt)-P (phosphorous) alloy metal coating provided on an inner surface of the nut and a fluorine coating provided on the surface of the alloy metal coating.

An etching apparatus includes: a chamber configured to accommodate a substrate to be processed having an etching target film; a gas exhaust mechanism configured to exhaust an inside of the chamber; an etching gas supply mechanism configured to supply an etching gas into the chamber; and a gas cluster generation mechanism configured to generate a gas cluster in the chamber by spraying a cluster gas into the chamber, wherein a gas produced by a reaction when the etching target film is etched with the etching gas is discharged from the chamber by the gas cluster generated by the gas cluster generation mechanism.

Etching apparatus and etching method

A processing apparatus includes a gas supply passage for supplying a corrosive gas having a halogen, a part of the passage being made of a metal; a stabilization reaction unit which has an energy generator for supplying light energy or heat energy to the corrosive gas that has passed through the metallic part of the gas supply passage and/or has an obstacle configured to apply a collision energy to the corrosive gas that has passed through the metallic part of the gas supply passage, the collision energy being generated from a collision between the obstacle and said corrosive gas. A reaction for stabilizing a compound containing the metal and the halogen contained in the corrosive gas takes place by means of at least one of the light energy, heat energy, and collision energy; and a trapping unit which traps the compound stabilized in the stabilization reaction unit.

Processing apparatus

Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an Fgas that are diluted with an inert gas into the chamber such that the FNO gas and the Fgas are reacted with the portion of silicon existing on the surface of the substrate to be processed.

Etching method and non-transitory storage medium

The flow rate controller controlling a flow rate of gas supplied through a gas passage includes: a main gas pipe; a flow rate detecting unit detecting the flow rate of gas supplied through the main gas pipe and outputting a flow rate signal; a flow rate control valve mechanism controlling a flow rate; a conversion data storage unit storing a plurality of pieces of conversion data corresponding to a plurality of gaseous species, to indicate a relationship between a flow rate instruction signal input from outside and a target flow rate; and a flow rate control main body which selects the corresponding conversion data from the conversion data based on a gaseous species selection signal input from outside, calculates the target flow rate based on the flow rate instruction signal, and controls the flow rate control valve mechanism based on the target flow rate and the flow rate signal.

Flow rate controller and processing apparatus

There is provided a fluid control apparatus which can reduce the number of members and can improve the assembling operation efficiency. A pressure indication deviceto be replaced with a relatively-higher frequency is coupled to a base blockexisting thereunder through male screw membersfrom above. An on-off valveto be replaced with a relatively-lower frequency has, at its lower portion, a block-shaped main bodyformed integrally therewith. The main bodyof the on-off valveis coupled to the base blockthrough male screw membersin the forward and rearward directions.

Fluid control apparatus

A pressure type flow rate control reference allows the performance of flow rate calibrations of a flow rate controller on all types of gases, including corrosive gases, at low costs, and also has excellent flow rate control accuracy. The pressure type flow rate control reference includes a pressure controller for adjusting the pressure of a calibration gas from a calibration gas supply source, a first volume provided on the downstream side of a pressure controller, a first connection mouth of an uncalibrated flow rate controller provided on the downstream side of the first volume, a reference pressure type flow rate controller connected to a second connection mouth on the downstream side of the uncalibrated flow rate controller, a second volume provided on the downstream side of a reference pressure type flow rate controller, and an evacuation device provided on the downstream side of the second volume.

Pressure type flow rate control reference and corrosion resistant pressure type flow rate controller used for the same

A thermal mass flow meter and a thermal mass flow control device addresses a thermal siphon error, even if they are in a compact and inexpensive structure, without using a flow path converting block. A control computing process portion is configured to correct a measurement error caused by thermal siphon by calculating a correction value based on a measurement value at time of depressurizing fluid flow path and flow rate measuring conduit to an atmospheric pressure or less, a difference between the measurement value and a measurement value at time of charging an actual fluid into the flow rate measuring conduit, kind of the actual fluid, pressure at time of charging the actual fluid, and flow ratio of the fluid flowing in the fluid flow path and the flow rate measuring conduit, storing the correction value, and correcting an actual measured output flow value by the stored correction value.

Thermal type mass flow meter, and thermal type mass flow control device

A gas supply unit and a gas supply system that are small-sized and inexpensive. The gas supply unit is installed on operation gas conveyance pipeline and has fluid control devices communicated via flow path blocks and controlling operation gas. The gas supply unit has the first flow path block, to one side of which an inlet open/close valve included in the fluid control devices is attached, and also has the second flow path block, to one side of which a purge valve included in the fluid control devices is attached. The first flow path block and the second flow path block are layered in the direction perpendicular to the conveyance direction of the operation gas. The inlet open/close valve and the purge valve are arranged between a mass flow controller installed on the operation gas conveyance pipeline and an installation surface where the unit is installed.

Gas supply unit and gas supply system

Growing community of inventors

Nirasaki, Japan

Shuji Moriya