Sumco Corporation

Shuichi Samata

Noritomo Mitsugi

Kazutaka Eriguchi

Ayumi Masada

Masataka Hourai

Kiyoshi Nagai

Sumio Miyazaki

Kei Matsumoto

Sayaka Makise

Syun Sasaki

Provided is a method of evaluating a silicon layer, including forming an oxide film on a surface of a silicon layer, performing a charging treatment of charging a surface of the formed oxide film to a negative charge, and measuring a resistivity of the silicon layer that has been subjected to the charging treatment by a van der Pauw method.

Method of evaluating silicon layer and a method of manufacturing silicon epitaxial wafer

Provided is a method of evaluating carbon concentration of a silicon sample, which includes: forming an oxide film on at least a part of a surface of an evaluation-target silicon sample; irradiating a particle beam onto a surface of the oxide film; irradiating excitation light having energy larger than a band gap of silicon onto the surface of the oxide film, onto which the particle beam has been irradiated; measuring intensity of photoluminescence emitted from the evaluation-target silicon sample irradiated with the excitation and evaluating carbon concentration of the evaluation-target silicon sample on the basis of the measured intensity of photoluminescence, wherein the photoluminescence is band-edge luminescence of silicon.

Method of evaluating carbon concentration of silicon sample, method of evaluating silicon wafer manufacturing process, method of manufacturing silicon wafer, method of manufacturing silicon single crystal ingot, silicon single crystal ingot and silicon wafer

Provided is a method of measuring a carbon concentration of a silicon sample, the method including introducing hydrogen atoms into a measurement-target silicon sample; subjecting the measurement-target silicon sample into which hydrogen atoms have been introduced to evaluation by an evaluation method of evaluating a trap level in a silicon band gap, without an electron beam irradiation treatment; and determining the carbon concentration of the measurement-target silicon sample on the basis of an evaluation result at least one trap level selected from the group consisting of Ec-0.10 eV, Ec-0.13 eV and Ec-0.15 eV, among the evaluation results obtained by the evaluation, wherein the determined carbon concentration is lower than 1.0E+16 atoms/cm.

Method of measuring carbon concentration of silicon sample, method of manufacturing silicon single crystal ingot, silicon single crystal ingot and silicon wafer

The method is a method of evaluating a manufacturing process of a silicon material, wherein the manufacturing process includes a process that uses a member containing a carbon-containing sintered body, and the method of evaluating the manufacturing process of a silicon material includes performing DLTS measurement on a silicon material manufactured in the manufacturing process, and estimating a heavy metal contamination source of a silicon material manufactured in the manufacturing process with an indicator in the form of presence/absence of detection of a peak of a carbon-related level and presence/absence of detection of a peak of a heavy metal-related level in a DLTS spectrum obtained by the DLTS measurement.

Method of evaluating manufacturing process of silicon material and manufacturing method of silicon material

To provide a method of removing a heavy metal contained in a thinned semiconductor substrate. A method of removing a heavy metal in a semiconductor substrate of the present invention comprises: attaching, to a rear surface of the semiconductor substrate, a material that lowers a potential barrier of the rear surface of the semiconductor substrate, on a front surface of which a circuit is to be formed or is formed; applying a thermal treatment to the semiconductor substrate under a condition based on a thickness and a resistivity of the semiconductor substrate; and, depositing the heavy metal in the semiconductor substrate on the rear surface.

Growing community of inventors

Saga, Japan

Shuichi Samata