Jx Nippon Mining Metals Corporation

Nippon Mining & Metals Co., Ltd.

Nikko Materials Company, Limited

Shuichi Irumata

Ryo Suzuki

Yasuhiro Yamakoshi

Takeo Okabe

Hirohito Miyashita

Takashi Fukutani

Chisaka Miyata

(1) The present invention provides a method for manufacturing a sputtering target in which the controllability of crystal orientation is improved. Specifically, the present invention provides a method for manufacturing a sputtering target, comprising a step of shaping at least one raw material powder selected from a metal and a metal oxide into a desired target shape using an additive manufacturing method. (2) The present invention provides a method for manufacturing a sputtering target capable of improving production efficiency. Specifically, the present invention provides a method for manufacturing a sputtering target in which a backing plate and a sputter part are bonded, comprising a shaping step of shaping at least one raw material powder selected from a metal and a metal oxide into a desired sputter part shape on a backing plate or on an intermediate material provided on a backing plate using an additive manufacturing method.

Method for manufacturing sputtering target

A barrier film for a flexible copper substrate comprising a Co&#x2014;Cr alloy film containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is provided. The barrier film has a thickness of 3 to 150 nm and a film thickness uniformity of 10% or less at 1&#x3c3;. A sputtering target for forming a barrier film comprising a Co&#x2014;Cr alloy containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is also provided. The relative magnetic permeability in the in-plane direction of the sputtered face of the target is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling and inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch and has barrier characteristics that will not change even when the temperature rises due to heat treatment or the like.

Barrier film for flexible copper substrate and sputtering target for forming barrier film

A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 &#x3bc;m, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35&#xb0; from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.

Hafnium alloy target

Hafnium alloy target and process for producing the same

A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi. The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiOfilm. A method of manufacturing the above referenced hafnium silicide target is also provided.

Hafnium silicide target for forming gate oxide film, and method for preparation thereof

The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiOfilm, and to the manufacturing method thereof.

Hafnium silicide target for forming gate oxide film and method for preparation thereof

Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 &#x3bc;m, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35&#xb0; from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.

The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiOfilm, and the manufacturing method thereof.

Hafnium silicide target for gate oxide film formation and its production method

Provided is a hafnium silicide target for forming a gate oxide film composed of HfSi, wherein the oxygen content is 500 to 10000 ppm. Manufactured is a hafnium silicide target for forming a gate oxide film, wherein powder of the composition composed of HfSiis synthesized, pulverized to be 100 mesh or less, and thereafter subject to hot pressing or hot isostatic pressing (HIP) at 1700&#xb0; C. to 2120&#xb0; C. and 150 to 2000 kgf/cm. Thereby obtained is a hafnium silicide target, and the manufacturing method thereof, suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film, superior in embrittlement resistance, having a low generation of particles, and which is not likely to cause ignition of sintering powder or explosion of powder dust during the manufacturing process thereof.

Growing community of inventors

Ibaraki, Japan

Shuichi Irumata