Jx Nippon Mining Metals Corporation

Jx Advanced Metals Corporation

Nitto-denko Corporation

Sunstar Engineering Pte. Ltd.

Shuhei Murata

Takeshi Matsumura

Satoshi Nishikawa

Fumiteru Asai

Yoshihiro Uetani

Yasuhiro Yamakoshi

Hiroshi Takamura

Shinji Bessho

Kotaro Nagatsu

Hiroyoshi Take

Shigeru Fujita

Ryosuke Sakashita

Kengo Kaminaga

Koji Mizuno

Yuki Yamada

Daiki Shono

Yusuke Sato

Masaya Iwabuchi

Keijiro Sugimoto

A sputtering target comprised of a plurality of members including a target material and a base material, wherein the plurality of members includes a first member and a second member laminated to each other, wherein the first member contains Al, and the second member contains Cu, wherein at least one of the first member and the second member contains Mg, wherein the sputtering target includes an alloy layer containing Al and Cu between the first member and the second member, the alloy layer being in contact with the first member and the second member, and wherein the alloy layer further includes an Mg-containing layer containing 5.0 at % or more of Mg in at least a part of the alloy layer.

Sputtering target and method for producing sputtering target

Provided is a titanium sputtering target having a recrystallized structure having an average crystal grain diameter of 1 μm or less. Also provided is a method for producing a titanium sputtering target, the method comprising the steps of: subjecting a cut titanium ingot to large strain processing to provide a processed sheet; subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less.

Titanium sputtering target, production method therefor, and method for producing titanium-containing thin film

The disclosure is related to reducing the cost of sputtering target products. Provided is a sputtering target product wherein: the sputtering target product includes a target, a backing plate or backing tube, and insert material layer; at least a part of the non-sputtering side of the target is profiled so as to have protrusions and recesses that have plane symmetry; the insert material layer is formed so as to adhere closely to the profiled side, and the insert material is made of metal with specific gravity that is at least less than those of the metal constituting the target.

Sputtering target product and method for producing recycled sputtering target product

A sputtering target comprising a flat part and a tapered part on a sputter surface, wherein of the tapered part includes a crystal distortion having an average KAM value of 0.5&#xb0; or more. It is possible to lower the ignition failure rate of ignition (plasma ignition), and start the sputter process stably. Because the downtime of the device can thereby be shortened, it is possible to contribute to the improvement in throughput and cost performance.

Sputtering target capable of stabilizing ignition

A sputtering target comprising a flat part and a tapered part, wherein a machined groove for use in ignition is arranged on a sputtering surface of the target. With the sputtering target of the present invention, the ignition failure rate during ignition (plasma ignition) can be reduced, and the sputtering process can be started stably. It is thereby possible to shorten the downtime of the device, and consequently contribute to improved throughput and enhanced cost performance.

Sputtering target

A sputtering target formed from monocrystalline silicon is provided, wherein a sputter surface of the sputtering target is a plane inclined at an angle that exceeds 1&#xb0; and is less than 10&#xb0; from a {100} plane. The sputtering target formed from monocrystalline silicon provides a sputtering target which yields superior mechanical strength as well as exhibiting a sputter performance which is equivalent to that of a {100} plane. From a different perspective, in addition to superior mechanical strength, the monocrystalline silicon sputtering target yields superior particle characteristics, sputtering rate, crack resistance, surface shape uniformity and other characteristics.

Monocrystalline silicon sputtering target

The present invention relates to a crosslinking polymer-supported porous film for battery separator, including: a porous film; and a crosslinking polymer supported on the porous film, the crosslinking polymer having a plurality of cation-polymerizable functional groups in the molecule thereof and having oxyalkylene groups represented by general formula (I): in which the Rs may be the same or different and each independently represent a hydrogen atom or a methyl group, and n represents an integer of 4 to 9, in a side chain thereof.

Crosslinking polymer-supported porous film for battery separator and use thereof

The present invention aims to provide a tape for holding a chip that makes pasting and peeling of a chip-shaped workpiece easy. It is a tape for holding a chip having a configuration in which a pressure-sensitive adhesive layer is formed on a base material, wherein the pressure-sensitive adhesive layer has a chip-shaped workpiece pasting region onto which a chip-shaped workpiece is pasted and a frame pasting region onto which a mount frame is pasted, and that is used by pasting the mount frame to the frame pasting region, wherein the 180-degree peeling adhesive power of the pressure-sensitive adhesive layer to a silicon mirror wafer at the frame pasting region is 5 times or more the 180-degree peeling adhesive power of the pressure-sensitive adhesive layer to a silicon mirror wafer at the chip-shaped workpiece pasting region.

Tape for holding chip, method of holding chip-shaped workpiece, method of manufacturing semiconductor device using tape for holding chip, and method of manufacturing tape for holding chip

Growing community of inventors

Ibaraki, Japan

Shuhei Murata