United Microelectronics Corp.

Shu-Ming Yeh

Shao-Wei Wang

Keng-Jen Lin

Yu-Tung Hsiao

Yu-Ren Wang

Bin-Siang Tsai

Ting-An Chien

Hao-Hsuan Chang

Ping-Wei Huang

Hung-Chun Lee

A method for fabricating semiconductor device includes the steps of: forming a trench in a substrate; forming a pad layer adjacent to two sides of trench; forming a dielectric layer to fill the trench; and performing a dry etching process to remove the pad layer and part of the dielectric layer to form a shallow trench isolation (STI). Preferably, the dry etching process comprises a non-plasma etching process.

Method for fabricating shallow trench isolation

A fin field effect transistor (FinFET) on a silicon-on-insulator and method of forming the same are provided in the present invention. The FinFET includes first fin structure, second fin structure and an insulating layer. The first fin structure and the second fin structure are disposed on a substrate. The insulating layer covers the first fin structure and the second fin structure and exposes a first portion of the first fin structure and a second portion of the second fin structure. The first fin structure has a first height and the second fin structure has a second height different from the first height, and a top surface of the first fin structure and a top surface of the second fin structure are at different levels.

FinFET device on silicon-on-insulator and method of forming the same

The present invention provides a method for forming a stacked layer structure, including: first, a recess is provided, next, an oxide layer is formed in the recess, where the oxide layer has a thickness T, a high-k layer is formed on the oxide layer, a barrier layer is formed on the high-k layer, a silicon layer is then formed on the barrier layer, afterwards, an annealing process is performed on the silicon layer, so as to form an oxygen-containing layer between the silicon layer and the barrier layer, where the oxide layer has a thickness Tafter the annealing process is performed, and satisfies the relationship: (T&#x2212;T)/T&#x2266;0.05, and the silicon layer and the oxygen-containing layer are removed.

Method for forming a stacked layer structure

A semiconductor structure with a multilayer gate oxide is provided. The structure includes a substrate. A multilayer gate oxide is disposed on the substrate, wherein the multilayer gate oxide includes a first gate oxide and a second gate oxide. The first gate oxide contacts the substrate and the second gate oxide is disposed on and contacts the first gate oxide. The second gate oxide is hydrophilic. The first gate oxide is formed by a thermal oxidation process. The second gate oxide is formed by a chemical treatment.

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Tainan, Taiwan

Shu-Ming Yeh