Taiwan Semiconductor Manufacturing Comp. Ltd.

Shu-Hui Sung

Li-Chun Tien

Lee-Chung Lu

Ta-Pen Guo

Chung-Cheng Wu

Min Cao

Ting Yu Chen

Hsiang-Jen Tseng

Yung-Chin Hou

Shyue-Shyh Lin

Jung-chan Yang

Ali Keshavarzi

An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

Integrated circuits and manufacturing methods thereof

Growing community of inventors

Hsinchu County, Taiwan

Shu-Hui Sung