Taiwan Semiconductor Manufacturing Comp. Ltd.

Shu E Ku

Syun-Ming Jang Jang

Lain-Jong Li

Lih-Ping Li

Tien I Bao

Bi-Trong Chen

In accordance with the objectives of the invention a new method is provided for improving adhesion strength that is deposited over the surface of a layer of copper. Conventional etch stop layers of for instance dichlorosilane (SiClH) or SiOC have poor adhesion with an underlying layer of copper due to poor molecular binding between the interfacing layers. The surface of the deposited layer of copper can be provided with a special enhanced interface layer by using a method provided by the invention. That is pre-heat of the copper layer followed by a pre-cleaning treatment with ammonia (NH) and N, followed by forming an adhesive enhanced layer over the copper layer by treatment with Nor Oor Nwith alkyl-silane or alkyl silane.

Thin interface layer to improve copper etch stop

In accordance with the objectives of the invention a new method is provided for improving adhesion strength that is deposited over the surface of a layer of copper. Conventional etch stop layers of for instance dichlorosilane (SiCl H ) or SiOC have poor adhesion with an underlying layer of copper due to poor molecular binding between the interfacing layers. The surface of the deposited layer of copper can be provided with a special enhanced interface layer by using a method provided by the invention. That is pre-heat of the copper layer followed by a pre-cleaning treatment with ammonia (NH ) and N , followed by forming an adhesive enhanced layer over the copper layer by treatment with N or O or N with alkyl-silane or alkyl silane.

Growing community of inventors

Miado, Taiwan

Shu E Ku