Hitachi Chemical Company, Ltd.

Shouichi Sasaki

Masato Fukasawa

Takafumi Sakurada

Jin Amanokura

Sou Anzai

Yasuhiro Yano

Yan Hu

Takafumi Doudou

Hideaki Uehara

Toru Yoshikawa

The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

Polishing slurry and polishing method

The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

A composition for forming an electrolyte for a solid electrolytic capacitor having excellent electric properties (capacitance, equivalent series resistance, dielectric loss, impedance, etc.) in a frequency zone ranging from a low frequency to a high frequency, and is capable of easily forming a high yield of the solid electrolytic capacitor having an excellent resistance to stress in the steps and a high thermal resistance, and a solid electrolytic capacitor produced from the electrolyte. The composition comprises (A) an aniline compound, (B) an organic sulfonic acid, (C) water, (D) an organic solvent, and if necessary, (E) a specified compound.

Composition for forming electrolyte for solid electrolytic capacitor and

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Ibaraki, Japan

Shouichi Sasaki