Tokyo Electron Limited

Tokai Carbon Company, Ltd.

Shosuke Endoh

Shinji Himori

Yoshiyuki Kobayashi

Tsuyoshi Moriya

Takahiro Murakami

Tetsuji Sato

Eiichi Sugawara

Masaki Fujimori

Chishio Koshimizu

Daisuke Hayashi

Kazuya Nagaseki

Jun Hirose

Kazuki Denpoh

Koichi Nagakura

Noriyuki Iwabuchi

Shigeaki Kato

Tomoya Okubo

Tomoya Kubota

Jun Takeuchi

Masaaki Kishida

Tadakazu Matsunaga

Masaaki Mitsuno

A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.

Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component

A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.

Plasma processing apparatus, focus ring, and susceptor

A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ringincludes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.

Plasma processing apparatus and focus ring

A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.

Processing apparatus and gas discharge suppressing member

A method of forming a coating film of ceramic material on a surface of an internal member disposed in a vacuum processing apparatus, the surface of the internal member having holes formed therein. The method involves: (A) filling the holes of the internal member with padding plugs, each of which has a core member made from a metal material and a metal-resin composite layer covering the circumferential surface of the core member, the metal-resin composite layer being a complex composed of a metal material and a resinous material exhibiting nonconjugative property to a coating film; (B) forming a ceramic coating film on the surface of the internal member by plasma spraying after step (A); and (C) extracting the padding plugs out of the holes after step (B).

Method for coating internal member having holes in vacuum processing apparatus and the internal member having holes coated by using the coating method

A method manufactures an electrode plate for a plasma processing device in which a semiconductor wafer is processed to form a highly integrated circuit. The method includes a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material one or two backing steps of carbonizing the heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon and a polishing step of polishing one face of the baking material, which is exposed to plasma, to a depth of 20 .mu.m to 1.25 mm.

Method for manufacturing electrode plate for plasma processing device

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Nirasaki, Japan

Shosuke Endoh