Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Sumitomo Osaka Cement Co., Ltd.

Octec, Inc.

Tokyo Electron Limi Ted

Shoichiro Matsuyama

Kazuya Nagaseki

Shinji Himori

Yasuharu Sasaki

Masanobu Honda

Hisataka Hayashi

Hiroki Matsumaru

Katsuya Okumura

Mamoru Kosakai

Yukio Miura

Koichiro Inazawa

Toshiki Takahashi

Daiki Satoh

Keigo Maki

Hiroshi Inazumachi

Takashi Nishijima

Naoki Tamaru

Atsushi Matsuura

Jinyoung Park

Chishio Koshimizu

Daisuke Hayashi

Akira Koshiishi

Masahiro Inoue

Tokuhisa Ohiwa

Yohei Uchida

Itsuko Sakai

Toshihiro Hayami

Akihiro Yokota

Gen Tamamushi

Etsuji Ito

Kyo Tsuboi

Koichi Murakami

Wataru Takayama

Takaaki Nezu

Katsumi Horiguchi

Daisuke Tamura

Noriaki Imai

Susumu Nogami

Yoshikazu Sugiyasu

Tomoya Kato

Yuto Kosaka

Kyosuke Hayashi

Jun Kawanobe

A method of attracting an object to a mounting table is provided. The object is a substrate, an edge ring, or a combination of the substrate and the edge ring. The mounting table is provided with an electrostatic chuck including electrodes. After the object is placed on the electrostatic chuck, n-phase alternating current (AC) voltages (n≥2) are applied to the electrodes. Each phase voltage of the n-phase AC voltages has a phase different from each other, and the phase voltage of the n-phase AC voltages is applied based on a self-bias voltage of the object.

Attracting method

A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.

Plasma processing apparatus and processing method

An electrostatic chuck according to an exemplary embodiment includes a first region and a second region. The first region has a first upper surface. The first region is configured to hold a substrate disposed on the first upper surface. The second region has a second upper surface. The second region extends in a circumferential direction to surround the first region. The second region is configured to support a focus ring mounted on the second upper surface. The first upper surface and the second upper surface extend along a single flat surface. The first region and the second region provide a space therebetween to separate the first upper surface and the second upper surface from each other.

Electrostatic chuck, focus ring, support base, plasma processing apparatus, and plasma processing method

A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.

Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program

An edge ring that is placed on an electrostatic chuck of a substrate processing apparatus so as to surround a periphery of a substrate is provided. Multiple contact portions are provided on a lower surface of the edge ring, and each of the contact portions is of a ring shape. Each of the contact portions is in line contact with a mounting surface of the electrostatic chuck.

Edge ring and substrate processing apparatus

Provided is a mounting stage on which a substrate to be subjected to a plasma process is mounted. The mounting stage includes: an electrostatic chuck configured to attract the substrate and an edge ring disposed around the substrate; and supply holes through which a heat medium is supplied to a space between the electrostatic chuck and the edge ring. A groove is provided in at least one of the edge ring and the mounting stage, and the groove is not in communication with the supply holes.

Mounting stage, substrate processing device, and edge ring

Disclosed is a plasma processing apparatus including: a placing table including a focus ring placed thereon and an electrode provided therein so as to face the focus ring; and a voltage application unit that applies, to the electrode, voltages having different polarities in cycles or a voltage having a large absolute value in steps, during a plasma processing period.

A substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is supplied and an upper electrode facing the lower electrode and performs plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field. Distribution of a plasma density in the processing space is controlled by a magnetic field generated by controlling a plurality of electromagnets provided at a top surface of the upper electrode which is provided to be opposite to the processing space.

Substrate processing apparatus

Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including Ogas or Ngas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.

Method of manufacturing semiconductor device

There is provided a plasma processing apparatus including a processing chamberconfigured to perform a plasma process on a wafer W; an upper electrodeand a lower electrodearranged to face each other in the processing chamberand configured to form a processing space therebetween; and a high frequency power supplyconnected with at least one of the upper electrodeand the lower electrodeand configured to output a high frequency power into the processing chamber. The upper electrodeincludes an upper basemade of a dielectric material, and a plurality of fine holes A having a diameter equal to or less than twice a thickness of a sheath are formed in the upper base

Electrode and plasma processing apparatus

The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Plasma etching unit

Disclosed herein is a tablefor use in a plasma processing systemthat includes an electrically conductive member serving as a lower electrodefor plasma formation, a lower dielectric layer(first dielectric layer) formed on the electrically conductive member so that it covers the center of the upper surface of the electrically conductive member, serving to make a high-frequency electric field to be applied to plasma via a substrate uniform, and an upper dielectric layer(second dielectric layer) having a relative dielectric constant of 100 or more, formed on the electrically conductive member so that it is in contact at least with the edge of the substrate, in order to prevent a high-frequency current that has propagated along the electrically conductive member face from leaking to the outside of the substrate (wafer W).

Table for use in plasma processing system and plasma processing system

Plasma uniformity can be improved. An upper electrodefor use in a parallel plate type plasma processing apparatus includes a basemade of a dielectric material; and a conductive layerformed on at least a part of a surface of the basefacing a lower electrodeprovided in the plasma processing apparatus. Further, the conductive layerhaving a dense and sparse pattern such that the dense and sparse pattern at an outer portion of the surface of the basefacing the lower electrodeis denser than at an inner portion thereof.

Upper electrode and plasma processing apparatus

Growing community of inventors

Nirasaki, Japan

Shoichiro Matsuyama