Ulvac, Inc.

Shoichiro Kumamoto

Harunori Ushikawa

Satoru Toyoda

Masamichi Harada

A Co film is formed by supplying cobalt alkylamidinate, and a combined gas containing Hgas with at least one member selected from the group consisting of NH, NH, NH(CH), NHCH, and Nas a reducing gas, or at least one gas selected from the group consisting of NH, NH, NH(CH), NHCH, and Nas a reducing gas, on the surface of a base material, which consists of an SiOfilm or a barrier film serving as a primary layer. A Cu interconnection film is formed on the surface of the Co film.

Method for the formation of Co film and method for the formation of Cu interconnection film

Provided is a Cu electrical interconnection film forming method, wherein an adhesive layer (base film) having improved adhesiveness with a Cu electrical interconnection film is used, in a semiconductor device manufacturing process. After forming a barrier film on a substrate whereupon a hole or the like is formed, a PVD-Co film or a CVD-Co film or an ALD-Co film is formed on the barrier film. Then, after filling up or burying the hole or the like, which has the Co film formed on the surface, with a CVD-Cu film or a PVD-Cu film, heat treatment is performed at a temperature of 350&#xb0; C. or below, and the Cu electrical interconnection film is formed.

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Shizuoka, Japan

Shoichiro Kumamoto