Shin-etsu Chemical Co., Ltd.

Shin-etsu Chemical C O., Ltd.

Shohei Tagami

Michihiro Sugo

Hideto Kato

Hiroyuki Yasuda

Masahito Tanabe

Masahiro Furuya

Tomoyuki Goto

Kazunori Kondo

Takahiro Goi

Mitsuo Muto

Jae-Hyun Kim

Katsuya Takemura

Hideyoshi Yanagisawa

Takanobu Takeda

Tae-hoon Kim

Jung-sik Choi

Takato Sakurai

Masahiro Yoshizawa

Jun-won Han

Hideyuki Ito

A temporary adhesive material for wafer processing temporarily bonds a support to a wafer having a circuit-forming front and back surface for processing, including a composite temporary adhesive material layer having at least a two-layer structure of first and second temporary adhesive layers, the first layer including a thermoplastic resin layer that is releasably adhered to the wafer's front surface; and the second layer including a photo-curing siloxane polymer layer laminated on the first layer. A wafer processing laminate, a temporary adhesive material for wafer processing, and a method for manufacturing a thin wafer using the same, which suppress wafer warpage at the time of heat-bonding, have excellent delaminatability and cleaning removability, allow layer formation with uniform film thickness on a heavily stepped substrate, are highly compatible with steps of forming TSV, etc., have excellent thermal process resistance, and are capable of increasing productivity of thin wafers.

Wafer processing laminate, temporary adhesive material for wafer processing, and method for manufacturing thin wafer

A cleaning solution for temporary adhesive for substrates contains: tetrabutylammonium fluoride; dimethyl sulfoxide; and a liquid compound having a solubility parameter of 8.0 or more and 10.0 or less and having a heteroatom. The tetrabutylammonium fluoride is preferably contained at a content of 1 mass % or more and 15 mass % or less in 100 mass % of a total of the tetrabutylammonium fluoride, the dimethyl sulfoxide, and the liquid compound. The dimethyl sulfoxide is preferably contained at a content of 5 mass % or more and 30 mass % or less in 100 mass % of a total of the tetrabutylammonium fluoride, the dimethyl sulfoxide, and the liquid compound.

Cleaning solution for temporary adhesive for substrates, substrate cleaning method, and cleaning method for support or substrate

The present invention provides: a temporary adhesive for wafer processing, said temporary adhesive being used for the purpose of provisionally bonding a wafer to a support, while being composed of a photocurable silicone resin composition that contains a non-functional organopolysiloxane; a wafer processed body; and a method for producing a thin wafer, said method using a temporary adhesive for wafer processing.

Temporary adhesive for wafer processing, wafer laminate and method for producing thin wafer

A wafer processing laminate comprising a support, a temporary adhesive material layer laminated on the support, and a wafer stacked on the temporary adhesive material layer, the wafer having a front surface on which a circuit is formed and a back surface to be processed, the temporary adhesive material layer comprising a first temporary adhesive layer composed of a thermoplastic resin layer (A) laminated on the front surface of the wafer and a second temporary adhesive layer composed of a thermosetting resin layer (B) laminated on the first temporary adhesive layer, the thermoplastic resin layer (A) being soluble in a cleaning liquid (D) after processing the wafer, the thermosetting resin layer (B) being insoluble in the cleaning liquid (D) after heat curing and capable of absorbing the cleaning liquid (D) such that the cleaning liquid (D) permeates into the layer (B). This wafer processing laminate allows a wide selection of materials, facilitates separation and collection of a processed wafer, meets requirements on various processes, and can increase productivity of thin wafers.

Wafer processing laminate and method for processing wafer

A circuit substrate processing laminate has, sequentially in the order of a support, a temporary adhesive material layer releasably laminated on the support, and a circuit substrate. The circuit substrate has a front surface on which a circuit is formed and a back surface to be processed. The temporary adhesive material layer is releasably laminated to the front surface, and is composed of a thermosetting siloxane polymer layer laminated on the support, after cured, has a first peeling force of 10 to 500 mN/25 mm as measured by a 180&#xb0; peel test. The first peeling force is required for peeling the polymer layer from an interface with the support. The polymer layer, after cured, has a second peeling force of 50 to 1000 mN/25 mm as measured by the 180&#xb0; peel test. The second peeling force is required for peeling the polymer layer from an interface with the circuit substrate.

Circuit substrate processing laminate and method for processing circuit substrate

A temporary adhesive material for a wafer processing, used for temporarily bonding a support and a wafer having a circuit-forming front surface and a back surface to be processed, contains a complex temporary adhesive material layer having a three-layered structure that includes a first temporary adhesive layer composed of a non-silicone thermoplastic resin layer capable of releasably adhering to the front surface of the wafer, a second temporary adhesive layer composed of a thermosetting siloxane polymer layer laminated on the first temporary adhesive layer, and a third temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer laminated on the second temporary adhesive layer and capable of releasably adhering to the support. A wafer processing laminate and temporary adhesive material for a wafer processing facilitate temporary adhesion and separation, have excellent CVD resistance, and can increase productivity of thin wafers, and a method manufactures a thin wafer using the same.

A wafer processing laminate including support, temporary adhesive material layer formed on support, and wafer stacked on temporary adhesive material layer, wafer having front surface on which circuit is formed and back surface to be processed, wherein temporary adhesive material layer includes a three-layered complex temporary adhesive material layer that includes first temporary adhesive layer composed of thermoplastic organopolysiloxane polymer layer (A) having thickness of less than 100 nm and releasably laminated to front surface of wafer, second temporary adhesive layer composed of thermosetting siloxane-modified polymer layer (B) releasably laminated to first temporary adhesive layer, and third temporary adhesive layer composed of thermoplastic organopolysiloxane polymer layer (A') having thickness of less than 100 nm, releasably laminated to second temporary adhesive layer, and releasably laminated to support. This wafer processing laminate can withstand thermal process at high temperature exceeding 300&#xb0; C., and can increase productivity of thin wafers.

Temporary adhesive material for wafer processing, the temporary adhesive material being used for temporarily bonding support to wafer having circuit-forming front surface and back surface to be processed, including complex temporary adhesive material layer that has first temporary adhesive layer composed of thermosetting siloxane polymer layer (A), second temporary adhesive layer composed of thermosetting polymer layer (B), and third temporary adhesive layer composed of thermoplastic resin layer (C), wherein the polymer layer (A) is cured layer of composition containing (A-1) an organopolysiloxane having alkenyl group within its molecule, (A-2) an organopolysiloxane having RSiOunit and SiOunit, (A-3) organohydrogenpolysiloxane having two or more Si&#x2014;H groups per molecule, and (A-4) platinum-based catalyst. There can be provided a wafer processing laminate, temporary adhesive material for wafer processing, and method for manufacturing thin wafer using the same which facilitate temporary adhesion and delamination, has excellent CVD resistance, and increasing productivity of thin wafers.

A wafer processing laminate including support, temporary adhesive material layer laminated on the support, and wafer stacked on temporary adhesive material layer, wafer having front surface on which circuit is formed and back surface to be processed, temporary adhesive material layer including first temporary adhesive layer composed of thermoplastic resin layer (A) laminated on front surface of wafer and second temporary adhesive layer composed of thermosetting resin layer (B) laminated on first temporary adhesive layer, thermoplastic resin layer (A) being soluble in cleaning liquid (D) after processing wafer, thermosetting resin layer (B) being insoluble in cleaning liquid (D) after heat curing and capable of absorbing cleaning liquid (D) such that cleaning liquid (D) permeates into layer (B). This wafer processing laminate allows a wide selection of materials, facilitates separation and collection of processed wafer, meets requirements on various processes, and can increase productivity of thin wafers.

A wafer processing laminate including a support, a temporary adhesive material layer formed on the support, and a wafer, having a circuit-forming front surface and back surface to be processed, laminated on the temporary adhesive material layer, in which the temporary adhesive material layer is composed of a complex temporary adhesive material layer having a three-layered structure including a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer releasably adhering to the front surface of the wafer, second temporary adhesive layer composed of thermosetting siloxane-modified polymer layer releasably laminated on the first temporary adhesive layer, and third temporary adhesive layer composed of thermosetting siloxane polymer layer releasably laminated on the second temporary adhesive layer and releasably adhering to the support. A temporary adhesive material for a wafer processing facilitates temporary adhesion and separation, and allows separation even when a thin wafer is cut before separation.

A bonding arrangement comprising a silicone-base adhesive composition is suited for temporarily bonding a wafer to a support for wafer processing. The bonding arrangement includes a first temporary bond layer of non-silicone thermoplastic resin, and a second temporary bond layer of thermosetting silicone polymer and/or a third temporary bond layer of thermosetting siloxane-modified polymer. The second and/or third bond layer contains an antistatic agent.

Wafer processing bonding arrangement, wafer laminate, and thin wafer manufacturing method

A wafer processing laminate including a support, a temporary adhesive material layer formed on the support, and a wafer laminated on the temporary adhesive material layer, the wafer having a circuit-forming front surface and back surface to be processed, wherein the temporary adhesive material layer includes a complex temporary adhesive material layer having two-layered structure including a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A) having a film thickness of less than 100 nm and a second temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer (B), the first temporary adhesive layer being releasably laminated to the front surface of the wafer, the second temporary adhesive layer being releasably laminated to the first temporary adhesive layer and the support. A temporary adhesive material for a wafer processing which withstand a thermal process at high temperature exceeding 300&#xb0; C., facilitating temporary adhesion and delamination.

A laminate comprising a support, a temporary adhesive layer, and a wafer having a circuit-forming front surface and a back surface to be processed allows for processing the wafer. The temporary adhesive layer consists of a first temporary bond layer (A) of thermoplastic organosiloxane polymer which is releasably bonded to the front surface of the wafer and a second temporary bond layer (B) of thermosetting modified siloxane polymer which is laid contiguous to the first temporary bond layer and releasably bonded to the support.

Wafer processing laminate, wafer processing member, temporary bonding arrangement, and thin wafer manufacturing method

A method for temporarily bonding a wafer to a support via a temporary bonding arrangement is provided. The arrangement is a composite temporary adhesive layer consisting of a non-silicone thermoplastic resin layer (A) which is releasably bonded to the wafer, a thermosetting siloxane polymer layer (B) laid thereon, and a thermosetting siloxane-modified polymer layer (C) releasably bonded to the support. The method comprises the steps of providing a wafer laminate having a thermosetting silicone composition layer (B') formed on the resin layer (A) which has been formed on the wafer, providing a support laminate having a siloxane-containing composition layer (C&#x2032;) formed on the support, joining and heating layer (B&#x2032;) and layer (C&#x2032;) in vacuum for bonding and curing the layers together.

Wafer temporary bonding method and thin wafer manufacturing method

A wafer processing laminate, a wafer processing member, a temporary adhering material for processing wafer, and a method for manufacturing a thin wafer using the same. The wafer processing laminate includes a support, a temporary adhesive material layer formed thereon and a wafer laminated on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed. The temporary adhesive material layer includes a first temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A) releasably adhered on a surface of the wafer, a second temporary adhesive layer of a radiation curable polymer layer (B) laminated on the first temporary adhesive layer, and a third temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A') laminated on the second temporary adhesive layer and releasably adhered to the support.

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Annaka, Japan

Shohei Tagami