Mitsubishi Electric Corporation

Mitsubishi Electric Cooperation

Shohei Ogawa

Junji Fujino

Satoru Ishikawa

Takumi Shigemoto

Mikio Ishihara

Soichi Sakamoto

Yuji Imoto

Isao Oshima

Yusuke Ishiyama

Yuki Yano

Kiyoshi Arai

Yutaka Yoneda

Shinsuke Asada

Yoshihisa Uchida

Tatsunori Yanagimoto

Miho Nagai

Yoshihiro Kashiba

Kazuhisa Osada

An object is to provide a semiconductor device which suppresses poor bonding between a metal pattern and an electrode terminal due to insufficient temperature rise at the time of bonding the metal pattern and the electrode terminal. The electrode terminal is branched into a plurality of branch portions in a width direction on one end side of an extending direction thereof, of the plurality of branch portions, a first branch portion and a second branch portion are bonded on the metal pattern via a bonding material, respectively, the first branch portion has a wider width than that of the second branch portion, and the bonding material between the second branch portion and the metal pattern is thinner than the bonding material between the first branch portion and the metal pattern.

Semiconductor device with branch electrode terminal and method of manufacturing semiconductor device

An object is to provide a semiconductor device in which heat generated in a lead electrode when conducting a large current can be reduced and the bonding quality between the lead electrode and a semiconductor element can be inspected easily. A semiconductor device includes: a base portion; a semiconductor element mounted on the base portion; a metal part erect with respect to the semiconductor element and having one end bonded, with a bonding material, to a principal surface of the semiconductor element opposite to another principal surface of the semiconductor element mounted on the base portion; and a lead electrode connected to the semiconductor element through the metal part. The lead electrode includes a through hole extending in a thickness direction. The metal part connects the semiconductor element to the lead electrode, while inserted into the through hole of the lead electrode together with a part of the bonding material.

Semiconductor device comprising a lead electrode including a through hole

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

Semiconductor device with metal film, power conversion device with the semiconductor device, and method of manufacturing the semiconductor device

A semiconductor device includes an insulating substrate formed by integrating a ceramic base plate and a cooling fin; a multiple of plate interconnection members; and a plurality of semiconductor elements. The one faces of the semiconductor elements are bonded to the ceramic base plate of the insulating substrate with a chip-bottom solder, and the other faces thereof are bonded to the plate-interconnection members with a chip-top solder so that plate interconnection members correspond respectively to the semiconductor elements. The chip-bottom solder and the chip-top solder both contain mainly Sn and 0.3-3 wt. % Ag and 0.5-1 wt. % Cu. This allows the semiconductor device to be reduced in size without impairing heat dissipation.

Semiconductor device and method for producing semiconductor device

Provided is a semiconductor device stabilizing bond properties between an electrode terminal provided on a case and an internal wiring connected to a semiconductor element. A semiconductor device includes a base part, a semiconductor element, an electrode terminal, an insulating block, and an internal wiring. The semiconductor element is mounted on the base part. The electrode terminal is held by a case surrounding an outer periphery of the semiconductor element. An end portion of the electrode terminal protrudes toward an inner side of the case. The insulating block is provided on the base part between the semiconductor element and the case. In the internal wiring, one end portion is bonded to the end portion of the electrode terminal on the insulating block, and part of a region extending from the one end portion to the other end portion is bonded to the semiconductor element.

Semiconductor device

In a method for manufacturing a semiconductor device, a plurality of first provisional fixing portions are supplied on a front surface of a substrate such that the plurality of first provisional fixing portions are spaced from each other and thus dispersed. A first solder layer processed into a plate to be a first soldering portion is disposed in contact with the plurality of first provisional fixing portions. A semiconductor chip is disposed on the first solder layer. In addition a conductive member in the form of a flat plate is disposed thereon via a second provisional fixing portion and a second solder layer. A reflow process is performed to solder the substrate, the semiconductor chip and the conductive member together.

Semiconductor device, method for manufacturing the same, and power conversion device

An object is to provide a power module in which adhesion of a sealing resin is sufficient and which is highly reliable. The power module includes: an insulative board in which a pattern of a conductor layer is formed on a ceramic plate; power semiconductor elements placed on the insulative board; lead frames each in a plate shape connecting from electrodes of the power semiconductor elements to screw-fastening terminal portions; and a sealing resin portion that seals connection portions between the power semiconductor elements and the lead frames, and regions around the connection portions; wherein, in the lead frames, opening portions are formed at positions where each of the lead frames at least partly overlaps, in planar view, with a portion of the insulative board on which the conductor layer is not formed.

Power module having a hole in a lead frame for improved adhesion with a sealing resin, electric power conversion device, and method for producing power module

A semiconductor device includes a semiconductor element having a front electrode, an electrode plate having an area larger than the front electrode of the semiconductor element in a two-dimensional view and made of aluminum or aluminum alloy, and a metal member having a joint surface joined to the front electrode of the semiconductor element with solder, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, made of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate.

A power module of the invention includes a power semiconductor element mounted on a circuit board, and an adapter connected to a front-surface main electrode of the element, wherein the adapter includes a main-electrode wiring member which is connected to the front-surface main electrode of the element; and wherein the main-electrode wiring member includes: an element connection portion connected to the front-surface main electrode of the element; a board connection portion which is placed outside the element connection portion and connected to the circuit board; and a connector connection portion which is placed outside the element connection portion and connected to an external electrode through a connector.

Power module

An electrode terminal includes: a first drawn-out part to be bonded to a main electrode; and a second drawn-out part that is formed of a plate member in a continuous fashion from one end portion to be positioned opposite to the main electrode with a gap therebetween until another end portion to be connected to an external circuit, so that a portion in the first drawn-out part that is adjacent to a portion therein to be bonded to the main electrode, is bonded to an opposing surface to the main electrode in said one end portion; wherein the first drawn-out part is formed so that the portion to be bonded to the main electrode is away from the opposing surface; and wherein an opening portion corresponding to the main electrode is formed in the second drawn-out part.

Electrode terminal, semiconductor device for electrical power, and method for manufacturing semiconductor device for electrical power

A power module is fabricated, employing a clad metal that is formed by pressure-laminating aluminum and copper, in such a manner that the aluminum layer of the clad metal is bonded such as by ultrasonic bonding to the surface electrode of the power semiconductor chip and a wire is bonded to the copper layer thereof to establish electrical circuit. The clad metal is thermally treated in advance at a temperature higher than the operating temperature of the power semiconductor chip to sufficiently form intermetallic compounds at the interface between the aluminum layer and the copper layer for the intermetallic compounds so as not to grow in thickness after the bonding processes.

The present invention has a tray corresponding to a heat sink, a circuit part is accommodated in an accommodating part of the tray, and the circuit part is potting-sealed with a sealing resin such that external electrodes are exposed. The sealing resin covers and seals a top part of the tray.

Growing community of inventors

Tokyo, Japan

Shohei Ogawa